Browsing by Author "Tang, Hongwei"
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Publication A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs
; ; ; ; ; Journal article2024, IEEE ELECTRON DEVICE LETTERS, (45) 8, p.1453-1456Publication Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures
Journal article2024, SOLID-STATE ELECTRONICS, (214) April, p.Art. 108866Publication Device process and architecture aware physical TCAD model for ultra-thin film a-IGZO transistors
Proceedings paper2025, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2025-09-24, p.1-4Publication Dielectric breakdown analysis on bottom and top-gated IGZO-TFT
Proceedings paper2025, IEEE International Reliability Physics Symposium (IRPS), 2025-03-30Publication Enhanced Spectral Tunability by Sub-10 nm Nanogaps in Graphene-Metal Hybrid Metasurfaces
Journal article2025, ADVANCED SCIENCE, (40) 12, p.06898-1Publication Novel Design Strategy for High-Endurance (>1010) and Fast-Erase Oxide-Semiconductor Channel FeFET
Proceedings paper2024, IEEE International Electron Devices Meeting (IEDM), 2024-12-07Publication Study of Contact Resistance Components in Short-Channel Indium-Gallium-Zinc-Oxide Transistor
Journal article2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 1, p.567-573Publication Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures
Journal article2025, APPLIED PHYSICS LETTERS, (126) 23, p.232108-1-232108-6Publication The Impact of Process Steps on Nearly Ideal Subthreshold Slope in 300-mm Compatible InGaZnO TFTs
Journal article2025, IEEE ELECTRON DEVICE LETTERS, (46) 5, p.761-764Publication Understanding the Slow Erase Operation in IGZO-Channel FeFETs: The Role of Positive Charge Generation Kinetics
Journal article2025, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 13, p.245-251