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Browsing by Author "Tempel, Georg"

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    Analysis of silicide / diffusion contact resistance making use of transmission line stuctures

    Akheyar, Amal
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    Lauwers, Anne  
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    Lindsay, Richard
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    de Potter de ten Broeck, Muriel  
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    Tempel, Georg
    Proceedings paper
    2002, Silicon Materials - Processing, Characterization, and Reliability, 1/04/2002, p.53-58
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    Analytical model for failure rate prediction due to anomalous charge loss of Flash memories

    Degraeve, Robin  
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    Schuler, Franz
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    Lorenzini, Martino
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    Wellekens, Dirk  
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    Hendrickx, Paul  
    Proceedings paper
    2001, IEDM Technical Digest, 2/12/2001, p.699-702
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    Analytical percolation model for predicting anomalous charge loss in flash memories

    Degraeve, Robin  
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    Schuler, Franz
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    Kaczer, Ben  
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    Lorenzini, Martino
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    Wellekens, Dirk  
    Journal article
    2004, IEEE Trans. Electron Devices, (51) 9, p.1392-1400
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    Co-silicide, Co(Ni)-silicide and Ni-silicide to source/drain contact resistance

    Akheyar, Amal
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    Lauwers, Anne  
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    Kittl, Jorge
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    de Potter de ten Broeck, Muriel  
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    Chamirian, Oxana
    Proceedings paper
    2003, Advanced Short-Time Thermal Processing for Si-based CMOS devices, 27/04/2003, p.197-204
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    Development of sub-10-nm atomic layer deposition barriers for Cu/low-k interconnects

    Beyer, Gerald  
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    Satta, Alessandra
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    Schuhmacher, Jörg
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    Maex, Karen  
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    Besling, Wim
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    Kilpela, Olli
    Journal article
    2002, Microelectronic Engineering, (64) 1_4, p.233-245
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    Electrical activity of B and As segregated at the Si-SiO2 interface

    Fruehauf, Jens
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    Lindsay, Richard
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    Bergmaier, Andreas
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    Vandervorst, Wilfried  
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    Tempel, Georg
    Proceedings paper
    2002, Silicon Front-End Junction Formation Technologies, 1/04/2002, p.C3.4
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    Failure rate prediction and accelerated detection of anomalous charge loss in flash memories by using an analytical transient physics-based charge loss model

    Schuler, Franz
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    Tempel, Georg
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    Melzner, H.
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    Jacob, M.
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    Hendrickx, Paul  
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    Wellekens, Dirk  
    Journal article
    2002, Japanese Journal of Applied Physics. Part 1, (41) 4B, p.2650-2653
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    Statistical model for SILC and pre-breakdown current jumps in ultra-thin oxide layers

    Degraeve, Robin  
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    Kaczer, Ben  
    ;
    Schuler, Franz
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    Lorenzini, Martino
    ;
    Wellekens, Dirk  
    Proceedings paper
    2001, IEDM Technical Digest, 2/12/2001, p.121-4
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    Time dependent anomalous charge loss modeling in flash memories and an accelerated testing procedure

    Schuler, Franz
    ;
    Tempel, Georg
    ;
    Melzner, H.
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    Hendrickx, Paul  
    ;
    Wellekens, Dirk  
    ;
    Lorenzini, Martino
    Proceedings paper
    2001, Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials - SSDM, p.536-537

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