Browsing by Author "Tirrito, Matteo"
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Publication Characterization of highly doped Si:P, Si:As and Si:P:As epi layers for source/drain epitaxy
Proceedings paper2019, 2nd Joint ISTDM / ICSI 2019 Conference, 2/06/2019, p.11-15Publication Characterization of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy
Meeting abstract2019-06, 2nd Joint ISTDM / ICSI 2019 Conference, 2/06/2019, p.44-45Publication Contact resistivity of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy
Meeting abstract2020-07, ECS Prime Meeting, SiGe symposium, 4/10/2020, p.G03-1733Publication Contact resistivity of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy
Proceedings paper2020-09, ECS PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9, 4/10/2020, p.37-42Publication Source/drain materials for Ge nMOS devices: phosphorus activation in epitaxial Si, Ge, Ge1xSnx and SiyGe1xySnx
Journal article2020-05, ECS Journal of Solid State Science and Technology, (9) 4, p.44010Publication Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration
Oral presentation2019, Nagoya University