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Browsing by Author "Tsunoda, I."

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    Carrier lifetime evaluation of electron irradiated SiGe/Si diode

    Idemoto, T.
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    Ohyama, H.
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    Takakura, K.
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    Tsunoda, I.
    ;
    Yoneoka, M.
    ;
    Nakashima, T.
    Proceedings paper
    2010, 2nd Semiconductor Materials and Devices Forum - SMDF-2, 11/12/2010, p.154-155
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    Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy

    Oyhama, Hidenori
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    Naka, N.
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    Takakura, K.
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    Tsunoda, I.
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    Londos, C.A
    ;
    Bargallo Gonzalez, Mireia
    Meeting abstract
    2010, E-MRS Spring Meeting Symposium H: Post-Si CMOS Electronic Devices: The Role of Ge and III-V Materials, 7/06/2010
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    Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy

    Ohyama, Hidenori
    ;
    Naka, N.
    ;
    Takakura, K.
    ;
    Tsunoda, I.
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    Bargallo Gonzalez, Mireia
    ;
    Simoen, Eddy  
    Journal article
    2011, Microelectronic Engineering, (88) 4, p.484-487
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    Evaluation of electron irradiated SiGe/Si diodes by Raman spectroscopy

    Tsunoda, I.
    ;
    Naka, N.
    ;
    Takakura, K.
    ;
    Bargallo Gonzalez, Mireia
    ;
    Simoen, Eddy  
    ;
    Claeys, Cor
    Meeting abstract
    2010, 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications - RASEDA, 27/10/2010
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    Investigation of the electrical properties of carbon doped Si0.75Ge0.25/Si hetero junction diodes by 2 MeV electron irradiation

    Takakura, Kenichiro  
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    Ogata, H.
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    Inoue, T.
    ;
    Yoneoka, M.
    ;
    Tsunoda, I.
    ;
    Simoen, Eddy  
    ;
    Claeys, Cor
    Proceedings paper
    2015, 28th International Conference on Defects in Semiconductors - ICDS, 27/07/2015
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    Investigation of the Si doping effect in b-Ga2O3 films by co-sputtering of gallium oxide and Si

    Takakura, K.
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    Funasaki, S.
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    Tsunoda, I.
    ;
    Ohyama, H.
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    Takeuchi, D.
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    Nakashima, T.
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    Shibuya, M.
    Journal article
    2012, Physica B: Condensed Matter, (407) 15, p.2900-2902
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    Radiation damage of Si1-xGex S/D p-MOSFETs with different Ge concentrations

    Nakashima, T.
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    Idemoto, T.
    ;
    Tsunoda, I.
    ;
    Takakura, K.
    ;
    Yoneoka, M.
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    Ohyama, H.
    ;
    Yoshino, K.
    Journal article
    2012, Thin Solid Films, 520, p.3337-3340
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    Radiation damages of SiGe devices by electron irradiation and their thermally recovery bahavior

    Nakashima, T.
    ;
    Idemoto, T.
    ;
    Takakura, K.
    ;
    Tsunoda, I.
    ;
    Yoneoka, M.
    ;
    Ohyama, H.
    ;
    Yoshino, K.
    Proceedings paper
    2010, 2nd Semiconductor Materials and Devices Forum - SMDF-2, 11/12/2010, p.56-59
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    Radiation hardness of electrical properties of n-channel UTBOX SOI by 2 MeV electron irradiation

    Takakura, Kenichiro  
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    Goto, T.
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    Yoneoka, M.
    ;
    Tsunoda, I.
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    Simoen, Eddy  
    ;
    Claeys, Cor
    Oral presentation
    2015, 28th International Conference on Defects in Semiconductors - ICDS
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    Radiation influence on the electrical properties of n-channel UTBOX SOI GAAFETs by 2 MeV electron irradiation

    Iseri, K.
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    Takakura, Kenichiro  
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    Yoneoka, M.
    ;
    Tsunoda, I.
    ;
    Simoen, Eddy  
    ;
    Veloso, Anabela  
    Proceedings paper
    2017, 29th International Conference on Defects in Semiconductors - ICDS, 31/07/2017
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    Strain evaluation of electron irradiated SiGe/Si diodes by Raman spectroscopy

    Naka, N.
    ;
    Ohyama, H.
    ;
    Tsunoda, I.
    ;
    Takakura, K.
    ;
    Bargallo Gonzalez, Mireia
    ;
    Simoen, Eddy  
    Proceedings paper
    2010, 2nd Semiconductor Materials and Devices Forum - SMDF-2, 11/12/2010, p.68-71
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    Study of degradation mechanism by isothermal annealing of SOI FinFET after electron irradiation

    Matsuki, K.
    ;
    Matsuzaki, M.
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    Yoneoka, M.
    ;
    Tsunoda, I.
    ;
    Takakura, Kenichiro  
    ;
    Simoen, Eddy  
    Proceedings paper
    2017, 29th International Conference on Defects in Semiconductors - ICDS, 31/07/2017

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