Browsing by Author "Tsunoda, I."
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Publication Carrier lifetime evaluation of electron irradiated SiGe/Si diode
;Idemoto, T. ;Ohyama, H. ;Takakura, K. ;Tsunoda, I. ;Yoneoka, M.Nakashima, T.Proceedings paper2010, 2nd Semiconductor Materials and Devices Forum - SMDF-2, 11/12/2010, p.154-155Publication Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy
;Oyhama, Hidenori ;Naka, N. ;Takakura, K. ;Tsunoda, I. ;Londos, C.ABargallo Gonzalez, MireiaMeeting abstract2010, E-MRS Spring Meeting Symposium H: Post-Si CMOS Electronic Devices: The Role of Ge and III-V Materials, 7/06/2010Publication Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy
Journal article2011, Microelectronic Engineering, (88) 4, p.484-487Publication Evaluation of electron irradiated SiGe/Si diodes by Raman spectroscopy
Meeting abstract2010, 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications - RASEDA, 27/10/2010Publication Investigation of the electrical properties of carbon doped Si0.75Ge0.25/Si hetero junction diodes by 2 MeV electron irradiation
Proceedings paper2015, 28th International Conference on Defects in Semiconductors - ICDS, 27/07/2015Publication Investigation of the Si doping effect in b-Ga2O3 films by co-sputtering of gallium oxide and Si
;Takakura, K. ;Funasaki, S. ;Tsunoda, I. ;Ohyama, H. ;Takeuchi, D. ;Nakashima, T.Shibuya, M.Journal article2012, Physica B: Condensed Matter, (407) 15, p.2900-2902Publication Radiation damage of Si1-xGex S/D p-MOSFETs with different Ge concentrations
;Nakashima, T. ;Idemoto, T. ;Tsunoda, I. ;Takakura, K. ;Yoneoka, M. ;Ohyama, H.Yoshino, K.Journal article2012, Thin Solid Films, 520, p.3337-3340Publication Radiation damages of SiGe devices by electron irradiation and their thermally recovery bahavior
;Nakashima, T. ;Idemoto, T. ;Takakura, K. ;Tsunoda, I. ;Yoneoka, M. ;Ohyama, H.Yoshino, K.Proceedings paper2010, 2nd Semiconductor Materials and Devices Forum - SMDF-2, 11/12/2010, p.56-59Publication Radiation hardness of electrical properties of n-channel UTBOX SOI by 2 MeV electron irradiation
Oral presentation2015, 28th International Conference on Defects in Semiconductors - ICDSPublication Radiation influence on the electrical properties of n-channel UTBOX SOI GAAFETs by 2 MeV electron irradiation
Proceedings paper2017, 29th International Conference on Defects in Semiconductors - ICDS, 31/07/2017Publication Strain evaluation of electron irradiated SiGe/Si diodes by Raman spectroscopy
Proceedings paper2010, 2nd Semiconductor Materials and Devices Forum - SMDF-2, 11/12/2010, p.68-71Publication Study of degradation mechanism by isothermal annealing of SOI FinFET after electron irradiation
Proceedings paper2017, 29th International Conference on Defects in Semiconductors - ICDS, 31/07/2017