Browsing by Author "Van Meirhaeghe, R. L."
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Publication A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky barriers due to reactive ion etching
Journal article1997, Semiconductor Science and Technology, 12, p.907-912Publication A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors
Publication A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments
Journal article1999, Semiconductor Science and Technology, (14) 9, p.871-877Publication A BEEM study of PtSi Schottky contacts on ion-milled Si
Publication A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching
Journal article1997, Journal of Applied Physics, (82) 4, p.1696-1699Publication An XPS study of the effects of semiconductor processing treatments used to make InP optoelectronic devices
Publication Controlling CoSi2 nucleation: the effect of entropy of mixing
Proceedings paper2001, Gate Stack and Silicide Issues in Silicon Processing, 24/04/2000, p.C7.9.1-C7.9.6Publication Controlling CoSi2 nucleation: the effect of entropy of mixing
Oral presentation2000, MRS Spring Meeting Symposium: Gate stack and silicide issues in silicon processing; 2000;Publication CoSi2 formation in the presence of interfacial silicon oxide
Journal article1999, Appl. Phys. Lett., (74) 20, p.2930-32Publication CoSi2 formation in the Ti/Co/SiO2/Si system
Journal article2000, J. Appl. Physics, (88) 1, p.133-140Publication Determination of tunnelling parameters in ultra-thin oxide poly-Si/SiO2/Si structures
Journal article1995, Solid-State Electronics, (38) 8, p.1465-1471Publication Epitaxial CoSi2 formation by a Cr or Mo interlayer
Proceedings paper2000, Gate Stack and Silicide Issues in Silicon Processing, p.C10.2Publication Formation of epitaxial CoSi2 by a Cr or Mo interlayer: comparison with a Ti interlayer
Journal article2001, Journal of Applied Physics, (89) 4, p.2146-2150Publication Influence of mixing entropy on the nucleation of CoSi2
Journal article2000, Physical Review B, (62) 18, p.12045-12051Publication Influence of Ti on CoSi2 nucleation
Journal article2000, Applied Physics Letters, (77) 20, p.3170-3172Publication Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy
Publication Nondestructive characterization of thin silicides using x-ray reflectivity
Publication Orientation dependent stress build-up during the formation of epitaxial CoSi2
Oral presentation2000, Materials for Advanced Metallization Conference - MAM; February 28 - March 1, 2000; Stresa, Italy.Publication Orientation-dependent stress build-up during the formation of epitaxial CoSi2
Journal article2001, Microelectronic Engineering, (55) 1_4, p.145-150