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Browsing by Author "Van Rossum, Marc"

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    '1 Thru +2.5 Reflects': A new technique for de-embedding MIC/MMIC device measurements in fixed-length fixtures

    Wang, Connie
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    Nauwelaers, Bart  
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    De Raedt, Walter  
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    Van Rossum, Marc
    Proceedings paper
    1996, Proceedings of the European Microwave Conference; September 1996; Prague, Czech Republic., p.174-177
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    A 50 nm vertical Si0.70/Ge0.30/Si0.85/Ge0.15 pMOSFET with an oxide/nitride gate dielectric

    Verheyen, Peter  
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    Collaert, Nadine  
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    Caymax, Matty  
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    Loo, Roger  
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    Van Rossum, Marc
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    De Meyer, Kristin  
    Proceedings paper
    2001, International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers, 18/04/2001, p.15-18
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    A 70nm vertical Si/Si1-xGex heterojunction pMOSFET with reduced DIBL sensitivity for VLSI applications

    Verheyen, Peter  
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    Collaert, Nadine  
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    Caymax, Matty  
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    Loo, Roger  
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    De Meyer, Kristin  
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    Van Rossum, Marc
    Proceedings paper
    1999, Silicon Nanoelectronics Workshop Abstracts, 12/06/1999
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    A Combined X-Ray Diffraction and Raman Analysis of Ni/Au/Te-Ohmic Contacts to n-GaAs

    Watté, J.
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    Wuyts, Koen
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    Silverans, R. E.
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    Van Hove, Marleen
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    Van Rossum, Marc
    Journal article
    1994, Journal of Applied Physics, 75, p.2055-2060
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    A high-gain coplanar GaAs PHEMT K-band dual-gate amplifier

    Baeyens, Yves
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    Schreurs, Dominique  
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    De Raedt, Walter  
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    Nauwelaers, Bart  
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    Van Rossum, Marc
    Proceedings paper
    1996, GaAs '96 - European Gallium Arsenide and Related III-V Compounds Applications Symposium and Associated CAD Workshop; 5-7 June 19, p.1-4
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    A new technique for in-fixture calibration using standards of constant length

    Wan, Changhua
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    Nauwelaers, Bart  
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    Schreurs, Dominique  
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    De Raedt, Walter  
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    Van Rossum, Marc
    Journal article
    1998, IEEE Trans. Microwave Theory and Techniques, (46) 9, p.1318-1320
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    A short guide to the PHANTOMS network

    Van Rossum, Marc
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    Magnus, Wim  
    Proceedings paper
    1994, 24th European Solid State Device Research Conference - ESSDERC, 11/09/1994, p.115-118
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    A vertical Si/Si1-xGex heterojunction pMOSFET with reduced DIBL sensitivity, using a novel gate dielectric approach

    Verheyen, P.
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    Collaert, Nadine  
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    Caymax, Matty  
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    Loo, Roger  
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    De Meyer, Kristin  
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    Van Rossum, Marc
    Proceedings paper
    1999, 1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers; 8-10 June 1999; Tai, p.19-22
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    Automated generation of intrinsic large-signal HEMT models from S-parameter measurements

    Schreurs, Dominique  
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    Baeyens, S.
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    Nauwelaers, Bart  
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    De Raedt, Walter  
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    Van Rossum, Marc
    Proceedings paper
    1995, Proceedings Microwave and Optronics Conference; May 30 - June 1, 1995; Sindelfingen, Germany., p.106-110
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    Characterization and modelling of HEMTs as microwave switches and millimetre wave MMIC switches

    Schreurs, Dominique  
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    Beheydt, Samie
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    Vanhaecke, Joachim
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    Baeyens, Yves
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    Nauwelaers, Bart  
    Proceedings paper
    1995, 25th European Solid State Device Research Conference - ESSDERC, 25/09/1995, p.707-710
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    Comparison of non-linear models based on linear and non-linear VNA measurements

    Schreurs, Dominique  
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    Verspecht, J.
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    Nauwelaers, Bart  
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    Barel, A.
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    Van Rossum, Marc
    Proceedings paper
    1996, Proceedings 4th International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits - INMMC, 10/10/1996, p.168-173
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    Complex permittivity measurement method based on asymmetry of reciprocal two-ports

    Wan, C.
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    Nauwelaers, Bart  
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    De Raedt, Walter  
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    Van Rossum, Marc
    Journal article
    1996, Electronics Letters, (32) 16, p.1497-1498
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    Consistent small-signal and large-signal extraction techniques for heterojunction FET's

    Jansen, Philippe
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    Schreurs, Dominique  
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    De Raedt, Walter  
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    Nauwelaers, Bart  
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    Van Rossum, Marc
    Journal article
    1995, IEEE Trans. Microwave Theory and Techniques, (43) 1, p.87-93
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    Coplanar amplifiers up to W-band using InP dual-gate HEMTs

    Baeyens, Yves
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    van der Zanden, Koen
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    Schreurs, Dominique  
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    Nauwelaers, Bart  
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    Van Hove, Marleen
    Proceedings paper
    1997, Proceedings of the Microwave and Optronics Conference - MIOP, 22/04/1997, p.61-64
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    DC, LF dispersion and RF characterisation of short-time stressed InP based LM-HEMTs

    Schreurs, Dominique  
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    Spiers, Ariane
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    De Raedt, Walter  
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    van der Zanden, Koen
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    Baeyens, Yves
    Journal article
    1996, Microelectronics and Reliability, 36, p.1911-1914
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    De-embedding MICs/MMICs in fixed-length fixtures: use of symmetric two-port transmission-line discontinuities

    Wang, Connie
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    Nauwelaers, Bart  
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    De Raedt, Walter  
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    Van Rossum, Marc
    Proceedings paper
    1996, Symposium on Antenna Technology and Applied Electromagnetics 1996 Conference Proceedings.; 6-8 August 1996; Montreal, Canada., p.635-8
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    Delay Times in Lattice Matched InGaAs/InP HEMT's with Gatelengths between 80 and 250 nm

    Finders, Jo
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    Baeyens, Yves
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    Schreurs, Dominique  
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    Van Hove, Marleen
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    De Raedt, Walter  
    Oral presentation
    1995, 19th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE '95); May 21-24, 1995; Stockholm, Sweden.
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    Development of advanced GaAs components for space applications

    Van Rossum, Marc
    Book chapter
    1996
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    Direct extraction of the non-linear model for two-port devices from vectorial non-linear network analyser measurements

    Schreurs, Dominique  
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    Verspecht, J.
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    Nauwelaers, Bart  
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    Van de Capelle, A.
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    Van Rossum, Marc
    Proceedings paper
    1997, 27th European Microwave Conference, 8/09/1997, p.921-926
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    Distribution of fields and charge carriers in cylindrical and planar nanosize structures

    Pokatilov, E. P.
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    Balaban, S. N.
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    Klimin, S. N.
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    Fomin, V. M.
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    Devreese, J. T.
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    Magnus, Wim  
    Oral presentation
    1998, 1998 March Meeting of the American Physical Society; 16-20 March 1998; Los Angeles, CA, USA.
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