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Browsing by Author "Van Tendeloo, G."

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    A microstructural study of the thermal stability of atomic layer deposited Al2O3 thin films

    Nistor, L.
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    Richard, Olivier  
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    Zhao, Chao
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    Bender, Hugo  
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    Stesmans, Andre  
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    Van Tendeloo, G.
    Proceedings paper
    2003-04, Microscopy of Semiconducting Materials 2003, 31/03/2003, p.397-400
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    A new diamond nucleation mechanism based on carbon transport through nanodiamond / TiO2 sol-gel composites

    Haenen, Ken  
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    Daenen, M.
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    Hardy, An  
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    Van Bael, Marlies  
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    Nesladek, Milos  
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    Zhang, L.
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    Van Tendeloo, G.
    Oral presentation
    2009, 3rd International Conference on New Diamond and Nano Carbons - NDNC
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    A potential method to correlate electrical properties and microstructure of a unique high-Tc superconducting Josephson junction

    Verbist, K.
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    Lebedev, O. I.
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    Van Tendeloo, G.
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    Tafuri, F.
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    Miletto Granozio, F.
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    Di Chiara, A.
    Journal article
    1999, Appl. Phys. Lett., (74) 7, p.1024-1026
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    Analysis of the local boron environment in boron-doped nanodiamond films from chemical vapor deposition

    Turner, S.
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    Lu, Y.G.
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    Janssens, S.D.
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    Da Pieve, F.
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    Lamoen, D.
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    Verbeeck, J.
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    Haenen, Ken  
    Journal article
    2012, Nanoscale, (4) 19, p.5960-5964
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    Characterization of B-doped ultra-nanocrystalline diamond films grown by plasma enhanced CVD under a continuous DC bias

    Janssen, W.
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    Ruttens, B.
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    Degutis, G.
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    Lu, Y.G.
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    Turner, S.
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    Verbeeck, J.
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    Van Tendeloo, G.
    Oral presentation
    2012, Hasselt Diamond Workshop - SBDD XVII
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    Characterization of diamond films grown under continuous DC bias by MW-PECVD – Evidence of ultra-nano-crystalline diamond film growth

    Mortet, Vincent
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    Zhang, L.
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    D'Haen, Jan  
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    Soltani, A.
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    Douhéret, O.
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    Troadec, D.
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    Van Tendeloo, G.
    Oral presentation
    2009, Hasselt Diamond Workshop - SBDD XIV
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    Characterization of phosphorus doped (110) homoepitaxial diamond films

    Balasubramaniam, Yaso
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    Janssens, Stoffel
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    Sakr, G.
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    Jomard, F.
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    Barjon, J.
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    Lu, Y.-G.
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    Turner, S.
    Oral presentation
    2013, JSAP-MRS Joint symposia of the 2013 JSAP Autumn Meeting
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    Comparative Hall studies in the electron - and hole-doped manganites La0.33Ca0.67MnO3 and La0.70Ca0.30MnO3

    Gordon, Ivan  
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    Wagner, Patrick
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    Das, Arabinda
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    Vanacken, J.
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    Moshchalkov, V. V.
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    Bruynseraede, Y.
    Journal article
    2000, Physical Review B, (62) 17, p.11633-11638
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    Comparison of nucleation and growth at Cr/diamond and CrOx/diamond interfaces

    Degutis, Giedrius
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    Pobedinskas, Paulius  
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    Lu, Y.
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    Turner, S.
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    Verbeeck, J.
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    D'Haen, Jan  
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    Hardy, An  
    Oral presentation
    2013, 24th International Conference on Diamond and Carbon Materials
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    Control of the grain size and sp2/sp3 ratio in nanocrystalline diamond films using continuous DC bias

    Mortet, Vincent
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    Zhang, L.
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    D'Haen, Jan  
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    Soltani, A.
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    Douhéret, O.
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    Troadec, D.
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    Van Tendeloo, G.
    Oral presentation
    2009, 3rd International Conference on New Diamond and Nano Carbons - NDNC
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    CVD diamond nucleation and the role of Ti/TiO2 studied by electron microscopy and spectroscopy

    Lu, Y.
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    Verbeeck, G.
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    Van Tendeloo, G.
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    De Dobbelaere, C.
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    Degutis, G.
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    Hardy, An  
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    Van Bael, Marlies  
    Oral presentation
    2011, 22nd European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides
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    Diamond nucleation by carbon transport from buried nanodiamond TiO2 sol-gel composites

    Daenen, M.
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    Zhang, L.
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    Erni, R.
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    Williams, Oliver
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    Hardy, An  
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    Van Bael, Marlies  
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    Wagner, Patrick
    Journal article
    2009, Advanced Materials, (21) 6, p.670-673
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    Direct experimental observation of local bond length variations in CVD grown B:NCD films by spatially resolved EELS

    Lu, Y.-G.
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    Turner, S.
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    Verbeeck, J.
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    Janssens, Stoffel
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    Wagner, Patrick
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    Haenen, Ken  
    Oral presentation
    2013, Hasselt Diamond Workshop 2013 - SBDD XVIII
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    Effect of deposition parameters on A1:ZnO transparant conductive oxide thin films prepared by DC sputtering

    Atalay, Ahmed
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    Van Gompel, Mathias
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    D'Haen, Jan  
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    Turner, Stuart
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    Van Tendeloo, G.
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    Haenen, Ken  
    Oral presentation
    2014, 13th International Conference on Reactive Sputter Deposition
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    Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures

    Jacobs, K.
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    Van Daele, B.
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    Leys, Maarten
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    Moerman, Ingrid  
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    Van Tendeloo, G.
    Journal article
    2003, Journal of Crystal Growth, 248, p.498-502
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    Formation of metallic In in InGaN/GaN multiquantum wells

    Van Daele, B.
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    Van Tendeloo, G.
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    Jacobs, Koen
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    Moerman, Ingrid  
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    Leys, Maarten
    Journal article
    2004, Applied Physics Letters, (85) 19, p.4379-4381
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    Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth: Experimental and theoretical study

    Mortet, V.
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    Zhang, L.
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    Eckert, M.
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    D'Haen, Jan  
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    Soltani, A.
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    Moreau, M.
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    Troadec, D.
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    Neyts, E.
    Journal article
    2012, Physica Status Solidi A, (209) 9, p.1675-1682
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    Growth and characteristics of n-type phosphorus doping on (110) oriented diamond - With influence of substrate miscut angle

    Balsubramniam, Yaso
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    Janssens, Stoffel
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    Dexters, Wim
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    Robaeys, Pieter
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    Sakr, G.
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    Jomard, F.
    Oral presentation
    2014, Hasselt Diamond Workshop - SBDD XIX
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    High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers

    Germain, Marianne
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    Leys, Maarten
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    Boeykens, Steven
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    Degroote, Stefan
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    Wang, Wenfei  
    Proceedings paper
    2004-12, GaN and Related Alloys, 1/12/2003, p.341-346
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    Imaging of H2 bubbles and the related strain field in silicon wafers exposed to RF hydrogen plasma

    Ghica, C.
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    Nistor, L.
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    Richard, Olivier  
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    Bender, Hugo  
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    Ulyashin, Aliaksandr
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    Van Tendeloo, G.
    Proceedings paper
    2004, Proceedings of the 13th European Microscopy Congress. Volume 2: Materials Sciences, 22/08/2004, p.395-396
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