Browsing by Author "Vanhellemont, Jan"
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Publication A low-frequency noise study of state-of-the-art silicon n+p junction diodes
Proceedings paper1995, Noise in Physical Systems and 1/f Fluctuations - ICNF. Proceedings of the 13th International Conference, 29/05/1995, p.537-540Publication A simple technique for the separation of bulk and surface recombination parameters in silicon
;Gaubas, EugenijusVanhellemont, JanJournal article1996, Journal of Applied Physics, (80) 11, p.6293-6297Publication A Study on the Microscopical and Macroscopical Effects of Hydrogenation on the Performance of Multicrystalline Solar Cells
Proceedings paper1994, 1st World Conference on Photovoltaic Energy Conversion. Conference Record of the 24thIEEE Photovoltaic Specialists Conference, 5/12/1994, p.1621-1624Publication Analysis of irradiation induced defects in silicon devices
Proceedings paper1995, RELECTRONIC '95. 9th Symposium on Quality and Reliability in Electronics; 16-18 Oct. 1995; Budapest, Hungary., p.329-34Publication Analytical electron microscopy of Si1-xGex/Si heterostructures and local isolation structures
;Armigliato, A. ;Balboni, R. ;Corticelli, F. ;Malvezzi, F.Vanhellemont, JanJournal article1995, Materials Science and Technology, 11, p.400-406Publication Analytical Electron Microscopy of Si1-xGex/Si Heterostructures and Local Isolation Structures
;Armigliato, A. ;Balboni, R. ;Corticelli, F. ;Frabboni, S. ;Malvezzi, F.Vanhellemont, JanOral presentation1994, 1st International Conference on Materials for Microelectronics; October 17-19, 1994; Barcelona, Spain.Publication Assessment of quantitative characterization of localized strain using electron diffraction contrast imaging
;Janssens, Koenraad ;Van Der Biest, O. ;Vanhellemont, JanMaes, HermanJournal article1997, Ultramicroscopy, 69, p.151-167Publication Brother silicon, sister germanium
;Vanhellemont, JanJournal article2007, Journal of the Electrochemical Society, (154) 7, p.H572-H583Publication Bulk defect induced low-frequency noise in n+-p silicon diodes
Journal article1998, IEEE Trans. Electron Devices, (45) 12, p.2528-2536Publication Carrier lifetime spectrocopy for defect characterization in semiconductor materials and devices
Journal article2016, ECS Journal of Solid State Science and Technology, (5) 4, p.P3108-P3137Publication Characterisation of high-energy proton irradiation induced recombination centers in silicon
Proceedings paper1996, Proceedings of the 6th Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology - GADEST'95, 2/09/1995, p.371-376Publication Characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy
Journal article2004, Journal of the Electrochemical Society, (151) 9, p.G598-G605Publication Characterization of SIPOS films by spectroscopic ellipsometry and transmission electron microscopy
Journal article1994, Applied Physics A, 58, p.77-80Publication Characterization of strain in an advanced semiconductor laser structure with nanometer range resolution using a new algorithm for electron diffraction contrast imaging interpretation
;Janssens, Koenraad ;Van Der Biest, O. ;Vanhellemont, Jan ;Maes, HermanHull, R.Journal article1995, Appl. Phys. Lett., (67) 11, p.1530-3Publication Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM
Journal article2001, Physica B, 308, p.294-297Publication Correlation between grown-in silicon substrate defects and silicon gate oxide breakdown characteristics
Meeting abstract1996, Belgische Natuurkundige Vereniging. Algemene Wetenschappelijke Vergadering, 6/06/1996Publication Creation and dissolution of oxygen related defects in czochralski grown silicon at high pressure - high temperatures
;Misiuk, A. ;Vanhellemont, Jan ;Claeys, Cor ;Hartwig, J. ;Prieur, E.Datsenko, L. Khrupa V.Oral presentation1994, 16th Conference on Applied CrystallographyPublication Creation and dissolution of oxygen related defects in czochralski grown silicon treated at high pressures - high temperatures
;Misiuk, A. ;Vanhellemont, Jan ;Claeys, Cor ;Hartwig, J. ;Prieur, E. ;Datsenko, L.Khrupa, V.Proceedings paper1995, Applied Crystallography. Proceedings of the XVI Conference, 22/08/1994, p.328-331Publication Deep levels in heat-treated and 252Cf-irradiated P-type silicon substrates with different oxygen content
Journal article1994, Semiconductor Science and Technology, 9, p.1474-1479Publication Deep-level transient spectroscopic study of quenched-in defects in germanium
;Segers, Siegfried ;Lauwaert, Johan ;Clauws, Paul ;Callens, FreddyVanhellemont, JanOral presentation2014, EMRS Spring Meeting Symposium X: Materials Research for Group IV Semiconductors