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Browsing by Author "Vanhellemont, Jan"

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    A low-frequency noise study of state-of-the-art silicon n+p junction diodes

    Simoen, Eddy  
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    Vanhellemont, Jan
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    Claeys, Cor
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    Bosman, Gijs
    Proceedings paper
    1995, Noise in Physical Systems and 1/f Fluctuations - ICNF. Proceedings of the 13th International Conference, 29/05/1995, p.537-540
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    A simple technique for the separation of bulk and surface recombination parameters in silicon

    Gaubas, Eugenijus
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    Vanhellemont, Jan
    Journal article
    1996, Journal of Applied Physics, (80) 11, p.6293-6297
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    A Study on the Microscopical and Macroscopical Effects of Hydrogenation on the Performance of Multicrystalline Solar Cells

    Rosmeulen, Maarten  
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    El Gamel, Hussam
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    Poortmans, Jef  
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    Trauwaert, Marie-Astrid
    Proceedings paper
    1994, 1st World Conference on Photovoltaic Energy Conversion. Conference Record of the 24thIEEE Photovoltaic Specialists Conference, 5/12/1994, p.1621-1624
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    Analysis of irradiation induced defects in silicon devices

    Vegh, Gerzson
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    Simoen, Eddy  
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    Vanhellemont, Jan
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    Claeys, C.
    Proceedings paper
    1995, RELECTRONIC '95. 9th Symposium on Quality and Reliability in Electronics; 16-18 Oct. 1995; Budapest, Hungary., p.329-34
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    Analytical electron microscopy of Si1-xGex/Si heterostructures and local isolation structures

    Armigliato, A.
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    Balboni, R.
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    Corticelli, F.
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    Malvezzi, F.
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    Vanhellemont, Jan
    Journal article
    1995, Materials Science and Technology, 11, p.400-406
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    Analytical Electron Microscopy of Si1-xGex/Si Heterostructures and Local Isolation Structures

    Armigliato, A.
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    Balboni, R.
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    Corticelli, F.
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    Frabboni, S.
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    Malvezzi, F.
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    Vanhellemont, Jan
    Oral presentation
    1994, 1st International Conference on Materials for Microelectronics; October 17-19, 1994; Barcelona, Spain.
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    Assessment of quantitative characterization of localized strain using electron diffraction contrast imaging

    Janssens, Koenraad
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    Van Der Biest, O.
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    Vanhellemont, Jan
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    Maes, Herman
    Journal article
    1997, Ultramicroscopy, 69, p.151-167
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    Brother silicon, sister germanium

    Vanhellemont, Jan
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    Simoen, Eddy  
    Journal article
    2007, Journal of the Electrochemical Society, (154) 7, p.H572-H583
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    Bulk defect induced low-frequency noise in n+-p silicon diodes

    Hou, F. C.
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    Bosman, Gijs
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    Simoen, Eddy  
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    Vanhellemont, Jan
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    Claeys, C.
    Journal article
    1998, IEEE Trans. Electron Devices, (45) 12, p.2528-2536
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    Carrier lifetime spectrocopy for defect characterization in semiconductor materials and devices

    Gaubas, Eugenijus
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    Simoen, Eddy  
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    Vanhellemont, Jan
    Journal article
    2016, ECS Journal of Solid State Science and Technology, (5) 4, p.P3108-P3137
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    Characterisation of high-energy proton irradiation induced recombination centers in silicon

    Kaniava, Arvydas
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    Vanhellemont, Jan
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    Simoen, Eddy  
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    Claeys, C.
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    Gaubas, Eugenijus
    Proceedings paper
    1996, Proceedings of the 6th Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology - GADEST'95, 2/09/1995, p.371-376
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    Characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy

    De Gryse, O.
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    Clauws, P.
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    Vanhellemont, Jan
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    Lebedev, O.I.
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    Van Landuyt, J.
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    Simoen, Eddy  
    Journal article
    2004, Journal of the Electrochemical Society, (151) 9, p.G598-G605
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    Characterization of SIPOS films by spectroscopic ellipsometry and transmission electron microscopy

    Kragler, G.
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    Bender, Hugo  
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    Willeke, Gerhard
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    Bucher, E.
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    Vanhellemont, Jan
    Journal article
    1994, Applied Physics A, 58, p.77-80
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    Characterization of strain in an advanced semiconductor laser structure with nanometer range resolution using a new algorithm for electron diffraction contrast imaging interpretation

    Janssens, Koenraad
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    Van Der Biest, O.
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    Vanhellemont, Jan
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    Maes, Herman
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    Hull, R.
    Journal article
    1995, Appl. Phys. Lett., (67) 11, p.1530-3
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    Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM

    De Gryse, O.
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    Clauws, P.
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    Lebedev, O.
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    Van Landuyt, J.
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    Vanhellemont, Jan
    ;
    Claeys, C.
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    Simoen, Eddy  
    Journal article
    2001, Physica B, 308, p.294-297
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    Correlation between grown-in silicon substrate defects and silicon gate oxide breakdown characteristics

    Vanhellemont, Jan
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    Kissinger, G.
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    Kenis, Karine  
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    Depas, Michel
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    Gräf, D.
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    Lambert, U.
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    Wagner, P.
    Meeting abstract
    1996, Belgische Natuurkundige Vereniging. Algemene Wetenschappelijke Vergadering, 6/06/1996
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    Creation and dissolution of oxygen related defects in czochralski grown silicon at high pressure - high temperatures

    Misiuk, A.
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    Vanhellemont, Jan
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    Claeys, Cor
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    Hartwig, J.
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    Prieur, E.
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    Datsenko, L. Khrupa V.
    Oral presentation
    1994, 16th Conference on Applied Crystallography
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    Creation and dissolution of oxygen related defects in czochralski grown silicon treated at high pressures - high temperatures

    Misiuk, A.
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    Vanhellemont, Jan
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    Claeys, Cor
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    Hartwig, J.
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    Prieur, E.
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    Datsenko, L.
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    Khrupa, V.
    Proceedings paper
    1995, Applied Crystallography. Proceedings of the XVI Conference, 22/08/1994, p.328-331
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    Deep levels in heat-treated and 252Cf-irradiated P-type silicon substrates with different oxygen content

    Kaniava, Arvydas
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    Vanhellemont, Jan
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    Simoen, Eddy  
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    Claeys, Cor
    Journal article
    1994, Semiconductor Science and Technology, 9, p.1474-1479
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    Deep-level transient spectroscopic study of quenched-in defects in germanium

    Segers, Siegfried
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    Lauwaert, Johan
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    Clauws, Paul
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    Callens, Freddy
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    Vanhellemont, Jan
    Oral presentation
    2014, EMRS Spring Meeting Symposium X: Materials Research for Group IV Semiconductors
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