Browsing by Author "Venegas, Rafael"
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Publication A 400GHz fMAX fully self-aligned SiGe:C HBT architecture
Proceedings paper2009-10, IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 13/10/2009, p.5-8Publication A low cost 90nm RF-CMOS platform for record RF circuit performance
Proceedings paper2005-06, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2005, p.60-61Publication A novel fully self-aligned SiGe:C HBT architecture featuring a single step epitaxial collector-base process
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.655-658Publication A novel isolation scheme featuring cavities in the collector for a high-speed 0.13μm SiGe:C BiCMOS technology
Proceedings paper2007, Silicon Monolithic Integrated Circuits in RF Systems Topical Meeting, 10/01/2007, p.158-161Publication Arsenic-doped Ge-spiked monoemitter SiGe:C HBTs by means of low-temperature trisilane based epitaxy
Oral presentation2011, 7th International Conference on Si Epitaxy and Heterostructures - ICSI-7Publication Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition
Journal article2012, Thin Solid Films, (520) 8, p.3345-3348Publication Comparison of a novel FSA and a QSA SiGe:C architecture for reverse operation
Proceedings paper2008, 4th International SiGe Technology and Device Meeting - ISTDM, 11/05/2008Publication Comparison of AlGaN/GaN MISHEMT powerbar designs
Journal article2014-02, Physica Status Solidi C, (11) 3_4, p.906-910Publication Comparison of AlGaN/GaN MISHEMT powerbar designs
Proceedings paper2013-08, 10th International Conference on Nitride Semiconductors, 25/08/2013Publication Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode
Journal article2015, Applied Physics Letters, (106) 8, p.83502Publication Fabrication and performance of Au-free AlGaN/GaN-on-Si power devices
Journal article2013, IEEE Transactions on Electron Devices, (60) 10, p.3071-3078Publication GaN-on-Si HEMTs for 50 V RF applications
Meeting abstract2012, European Microwave Integrated Circuits Conference - EuMIC, 28/10/2012Publication Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration
Journal article2011, Solid-State Electronics, 65-66, p.72-80Publication High frequency characterization and modelling of the parasitic RC performance of two terminal ESD CMOS protection devices
Journal article2003, Microelectronics Reliability, (43) 7, p.1011-1020Publication High temperature behaviour of GaN-on-Si high power MISHEMT devices
Proceedings paper2012, 42nd European Solid-State Device Research Conference - ESSDERC, 17/09/2012, p.302-305Publication Impact of isolation scheme on thermal resistance and collecotr-substrate capacitance of SiGe HBTs
Proceedings paper2011, 41st European Solid-State Device Research Conference - ESSDERC, 12/09/2011, p.243-246Publication Impact of lateral scaling on low frequency noise of 200 GHz SiGe:C HBTs
Proceedings paper2005-11, Noise and Fluctuations: 18th International Conference on Noise and Fluctuations - ICNF, 19/09/2005, p.253-256Publication Investigation of PECVD dielectrics for nondispersive metal- insulator-metal capacitors
Journal article2002, IEEE Electron Device Letters, (23) 4, p.191-193Publication Investigation of trapping effects on Au-free AlGaN/GaN Schottky diodes fabricated on C-doped buffer layers
Meeting abstract2015, International Conference on Nitride Semiconductors - ICNS-11, 30/08/2015Publication MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement
Journal article2016, Physica Status Solidi C, (13) 5_6, p.311-316