Browsing by Author "Vystavel, Tomas"
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Publication Application of electron channeling contrast imaging to 3D semiconductor structures through proper detector configurations
Journal article2020, Ultramicroscopy, 210, p.112928Publication Ascertaining the nature and distribution of extended crystalline defects in emerging semiconductor materials using electron channeling constrast imaging
Proceedings paper2018, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 8, 30/09/2018, p.387-396Publication Crystalline defect analysis in epitaxial Si0.7Ge0.3 layer using site-specific ECCI-STEM
Journal article2021, MICRON, 150, p.103123Publication Electron channeling contrast imaging: potential for future metrology in semiconductor industry
Meeting abstract2016, 230 ECS Meeting: Pacific Rim Meeting - PRiME, 2/10/2016, p.1951Publication Enhancing the defect contrast in ECCI through angular filtering of BSEs
Journal article2020, Ultramicroscopy, 210, p.112922Publication Non-destructive characterization of extended crystalline defects in confined semiconductor device structures
Journal article2018, Nanoscale, (10) 15, p.7058-7066Publication Seeing the invisible: metrology for extended crystalline defects in beyond silicon semiconductors
Proceedings paper2016, International SiGe Technology and Device Meeting - ISTDM, 7/06/2016Publication Seeing the invisible: metrology for extended defects in beyond-silicon semiconductor device structures
Meeting abstract2017, International Conference on Frontiers of Characterization and Metrology for Nanoelectronics - FCMN, 21/03/2017