Browsing by Author "Wagner, Paul-Jurgen"
- Results Per Page
- Sort Options
Publication A rigorous study of measurement techniques for negative bias temperature instability
Proceedings paper2007-10, IEEE International Integrated Reliability Workshop Final Report - IIRW, 15/10/2007, p.6-11Publication Analytic modeling of the bias temperature instability using capture/emission time maps
;Grasser, Tibor ;Wagner, Paul-Jurgen ;Reisinger, Hans ;Aichinger, T. ;Pobegen, G.Nelhiebel, M.Proceedings paper2011-12, IEEE International Electron Devices Meeting - IEDM, 4/12/2011, p.618-621Publication On the frequency dependence of the bias temperature instability
Proceedings paper2012, IEEE International Reliability Physics Symposium - IRPS, 15/04/2012, p.XT.8.1-XT.8.7Publication Oxide traps in MOS transistors: semi-automatic extraction of trap parameters from time dependent defect spectroscopy
Proceedings paper2010-07, 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA, 5/07/2010Publication Recent advances in understanding the bias temperature instability
Proceedings paper2010-12, IEEE International Electron Devices Meeting - IEDM, 6/12/2010Publication Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise
;Grasser, Tibor ;Reisinger, Hans ;Goes, Wolfgang ;Aichinger, ThomasHehenberger, PhillipProceedings paper2009, IEEE International Electron Devices Meeting - IEDM, 7/12/2009, p.729-732Publication The "permanent" component of NBTI: composition and annealing
;Grasser, Tibor ;Aichinger, Thomas ;Pobegen, Gregor ;Reisinger, HansWagner, Paul-JurgenProceedings paper2011-04, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.605-613Publication The paradigm shift in understanding the bias temperature instability: from reaction–diffusion to switching oxide traps
Journal article2011, IEEE Transactions on Electron Devices, (58) 11, p.3652-3666Publication The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability
;Grasser, Tibor ;Reisinger, Hans ;Wagner, Paul-Jurgen ;Schanovsky, FranzGoes, WolfgangProceedings paper2010-05, IEEE International Reliability Physics Symposium - IRPS, 2/05/2010, p.16-25Publication Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors
Journal article2010-12, Physical Review B, (82) 24, p.245318