Browsing by Author "Waldhoer, Dominic"
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Publication Comphy v3.0-A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices
Journal article2023, MICROELECTRONICS RELIABILITY, (146) July, p.Art. 115004Publication Efficient Modeling of Charge Trapping a Cryogenic Temperatures-Part II: Experimental
Journal article2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 12, p.6372-6378Publication Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory
Journal article2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 12, p.6365-6371Publication Enhancing the quality of low temperature SiO2 by atomic hydrogen exposure for excellent NBTI reliability
Meeting abstract2020, 51st IEEE Semiconductor Interface Specialists Conference (SISC), 16/12/2020, p.12.4Publication Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices
Journal article2021-01, PHYSICAL REVIEW APPLIED, (16) 1, p.014026-1-014026-24Publication Single-Versus Multi-Step Trap Assisted Tunneling Currents-Part II: The Role of Polarons
;Schleich, Christian ;Waldhoer, Dominic ;El-Sayed, Al-MoatasemTselios, KonstantinosJournal article2022, IEEE TRANSACTIONS ON ELECTRON DEVICES, (69) 8, p.4486-4493Publication Structure, electronic properties, and energetics of oxygen vacancies in varying concentrations of SixGe1-xO2
Journal article2022, PHYSICAL REVIEW MATERIALS, (6) 12, p.nn-Art. 125002