Browsing by Author "Wang, Linlin"
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Publication Comprehensive study of Ga Activation in Si, SiGe and Ge and 5 x 10-10 $Xcm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation
Proceedings paper2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.550-552Publication Effective contact resistivity reduction for Mo/Pd/n-In0.53Ga0.47As contact
; ;Wang, Linlin; ; ; ; Journal article2019, IEEE Electron Device Letters, (40) 11, p.1800-1803Publication Improved ohmic performance by the metallic bilayer contact stack of oxygen-incorporated La/ultrathin TiSi on n-Si
Journal article2018, IEEE Transactions on Electron Devices, (65) 5, p.1869-1872Publication Lanthanum and lanthanum silicide contacts on N-Type silicon
Journal article2017, IEEE Electron Device Letters, (38) 7, p.843-846Publication Observation of contact resistivity independence from Schottky barrier height on heavily doped P-type SiGe
Proceedings paper2016, 13th IEEE International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 25/10/2016, p.525-527Publication Oxygen gettering cap to scavenge parasitic oxide interlayer in TiSi contacts
Journal article2019-11, IEEE Electron Device Letters, (40) 11, p.1712-1715Publication Sub-10-9 Ohm.cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation
Proceedings paper2017, Symposium on VLSI Technology, 5/06/2017, p.214-215Publication Thermal stability of TiN/Ti/p+-Si0.3Ge0.7 contact with ultralow contact resistivity
Journal article2018, IEEE Electron Device Letters, (39) 1, p.83-86Publication TiSi(Ge) contacts formed at low temperature achieving around 2x10-9 $Xcm2 contact resistivities to p-SiGe
Journal article2017, IEEE Transactions on Electron Devices, (64) 2, p.500-506