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Browsing by Author "Weeks, Doran"

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    High efficiency low temperature pre-epi clean method for advanced group IV epi processing

    Machkaoutsan, Vladimir  
    ;
    Weeks, Doran
    ;
    Bauer, Matthias
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    Maes, Jan  
    ;
    Tolle, John
    ;
    Thomas, Shawn
    Proceedings paper
    2012, SiGe, Ge, and Related Compunds 5: Materials, Processing, and Devices, 7/10/2012, p.339-348
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    High efficiency low temperature pre-epi clean method for advanced group IV epi processing

    Machkaoutsan, Vladimir  
    ;
    Weeks, Doran
    ;
    Bauer, Matthias
    ;
    Maes, Jan  
    ;
    Tolle, John
    ;
    Thomas, Shawn
    Meeting abstract
    2012-09, 222nd ECS Meeting, Pacific RIM Meeting on Electrochemical and Solid-State Science, 7/10/2012, p.3137
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    Low-temperature pre-epitaxy surface cleaning of Si and SiGe

    Profijt, Harald
    ;
    Suhard, Samuel  
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    Rosseel, Erik  
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    Tolle, John
    ;
    Mertens, Hans  
    Meeting abstract
    2015-05, 9th International Conference on Silicon Epitaxy and Heterostructures - ICSI9, 17/05/2015, p.143-144
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    Orientation dependence of Si1-xCx:P growth and the impact on FinFET structues

    Tolle, John
    ;
    Weeks, Doran
    ;
    Bauer, Matthias
    ;
    Machkaoutsan, Vladimir  
    ;
    Maes, Jan  
    ;
    Togo, Mitsuhiro
    Meeting abstract
    2012, 222nd ECS Meeting, Pacific RIM Meeting on Electrochemical and Solid-State Science, 7/10/2012, p.3160
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    Orientation dependence of Si1-xCx:P growth and the impact on FiNFET structures

    Tolle, John
    ;
    Weeks, Doran
    ;
    Bauer, Matthias
    ;
    Machkaoutsan, Vladimir  
    ;
    Maes, Jan  
    ;
    Togo, Mitsuhiro
    Proceedings paper
    2012-10, SiGe, Ge, and Related Compunds 5: Materials, Processing, and Devices, 7/10/2012, p.491-497
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    SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET

    Bauer, Matthias
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    Machkaoutsan, Vladimir  
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    Zhang, Y.
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    Weeks, Doran
    ;
    Spear, Jennifer
    ;
    Thomas, Shawn
    Proceedings paper
    2008, SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices, 12/10/2008, p.1001-1013
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    Strain enhanced NMOS using in situ doped embedded Si1-xCx S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process

    Verheyen, Peter  
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    Machkaoutsan, Vladimir  
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    Bauer, Matthias
    ;
    Weeks, Doran
    ;
    Kerner, Christoph  
    Journal article
    2008-06, IEEE Electron Device Letters, (29) 11, p.1206-1208

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