Browsing by Author "Yang, H."
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Publication An investigation of field reduction effect on NBTI parameter characterization and lifetime prediction using a constant field stress method
; Publication Full spectral analysis of line edge roughness
Proceedings paper2005, Metrology, Inspection, and Process Control for Microlithography XIX, 28/02/2005, p.499-509Publication Impact of LER and CDU on device performance
Proceedings paper2005, Yield Management Solutions Seminar, 15/08/2005Publication Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process
Publication Insights into the effect of TiN thickness scaling on DC and AC NBTI characteristics in replacement metal gate pMOSFETs
; Publication Mechanism of positive-bias temperature instability in sub-1 nm TaN/HfN/HfO2 gate stack with low preexisting traps
Publication On-line spectral analysis of line edge roughness: algorithms qualification and transfer to etch
Journal article2005, Semiconductor FabTech, 25, p.96-101Publication Scalability and reliability of TaN/HfN/HfO2 gate stack fabricated by a high temperature process
Publication The 2021 Magnonics Roadmap
Publication Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs
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