Browsing by Author "Yang, Lijun"
- Results Per Page
- Sort Options
Publication Atomic layer doping of phosphorus and arsenic: experimental and atomistic modeling
Proceedings paper2008, 4th International Workshop on New Group IV Semiconductor Nanoelectronics, 25/09/2008Publication Ge-H empirical potential and simulation of Si epitaxy on Ge(100) by chemical vapor deposition from SiH4
Journal article2009, Physical Review B, 79, p.165312Publication Si passivation for high-k gate dielectrics on GE MOSFETs: further developments and understanding
Meeting abstract2009, Joint American Vacuum Society (AVS) - Taiwan Annual Physical Society Meeting on "Beyond Si CMOS", 20/01/2009, p.27Publication Si passivation in Ge pMOSFETS: further developments and understanding
Meeting abstract2008, 4th international Workshop on New Group IV Semiconductor Nanoelectronics, 25/09/2008, p.3-4Publication Si passivation in Ge pMOSFETS: further developments and understanding
Proceedings paper2008, 4th International Workshop on New Group IV Semiconductor Nanoelectronics, 25/09/2008Publication The influence of the epitaxial growth process parameters on layer characteristics and device performance in Si-passivated Ge pMOSFETs
Meeting abstract2009, 215th Electrochemical Society Spring Meeting, 24/05/2009, p.716Publication The influence of the epitaxial growth process parameters on layer characteristics and device performance in Si-passivated Ge pMOSFETs
Journal article2009, Journal of the Electrochemical Society, (156) 12, p.H979-H985Publication Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology
Journal article2010, Thin Solid Films, (518) 6, Suppl. 1, p.S48-S52Publication Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology
Meeting abstract2009, Abstracts 6th International Conference on Silicon Epitaxy and Heterostructures - ICSI-6, 17/05/2009, p.78-79