Browsing by Author "Yasuda, H."
Now showing 1 - 5 of 5
- Results per page
- Sort Options
Publication Impact of dopants and silicon structure dimensions on {113}- defect formation during 2 MeV electron irradiation in an UHVEM
Journal article2015, Physica Status Solidi C, (12) 8, p.1160-1165Publication In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures
Journal article2015, Physica Status Solidi C, (12) 3, p.275-281Publication In situ UHVEM study of {113}-defect formation in Si nanowires
Journal article2015, Semiconductor Science and Technology, (30) 11, p.114013Publication On the impact of dopants and Si structure dimensions on {113}-defect formation during in-situ 2 MeV electron-irradiation in an UHVEM
Meeting abstract2014, Extended Defects in Semiconductors - EDS, 14/09/2014Publication Ultra high voltage electron microscoy study of {113}-defect generation in Si nanowires
Proceedings paper2014, In-situ Characterization of Material Synthesis and Properties at the Nanoscale with TEM, 21/04/2014