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Browsing by Author "Yin, K.M."

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    Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack

    Veloso, Anabela  
    ;
    Yu, HongYu
    ;
    Lauwers, Anne  
    ;
    Chang, Shou-Zen
    ;
    Adelmann, Christoph  
    ;
    Onsia, Bart  
    Proceedings paper
    2007-09, Proceedings of the 37th European Solid-State Device Research Conference - ESSDERC, 11/09/2007
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    Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack

    Veloso, Anabela  
    ;
    Yu, HongYu
    ;
    Lauwers, Anne  
    ;
    Chang, Shou-Zen
    ;
    Adelmann, Christoph  
    ;
    Onsia, Bart  
    Journal article
    2008, Solid-State Electronics, (52) 9, p.1303-1311
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    Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value

    Yu, HongYu
    ;
    Singanamalla, Raghunath
    ;
    Ragnarsson, Lars-Ake  
    ;
    Chang, Vincent
    ;
    Cho, Hag-Ju
    Journal article
    2007, IEEE Electron Device Letters, (28) 7, p.656-658
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    Low Vt Ni-FUSI CMOS technology using a DyO cap layer with either single or dual Ni-phases

    Yu, HongYu
    ;
    Chang, Shou-Zen
    ;
    Veloso, Anabela  
    ;
    Lauwers, Anne  
    ;
    Adelmann, Christoph  
    ;
    Onsia, Bart  
    Proceedings paper
    2007, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2007, p.18-19

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