Browsing by Author "Zaima, S."
- Results Per Page
- Sort Options
Publication Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Meeting abstract2010, 218th ECS Meeting, 10/10/2010, p.1909Publication Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Journal article2011, Microelectronic Engineering, (88) 4, p.342-346Publication Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Meeting abstract2010, E-MRS Spring Meeting Symposium H: Post-Si CMOS Electronic Devices: The Role of III-V Materials, 7/06/2010Publication Formation of Ni(Ge1-ySny)/Ge1-xSnx/Ge contact for Ge1-xSnx source/drain Stressor
Oral presentation2010, 10th Chubu - Local Meeting of The Surface Science Society of JapanPublication GeSn technology: impact of Sn on Ge CMOS applications
Proceedings paper2011, ULSI Process Integration 7, 9/10/2011, p.231-238Publication GeSn Technology: Impact of Sn on Ge CMOS Applications
Meeting abstract2011, 220th Electrochemical Society Fall Meeting Symposium E9: ULSI Process Integration 7, 9/10/2011, p.2132Publication Impact of Sn on Ga activation in heteroepitaxial Ge1-xSnx layer
Proceedings paper2012, 59th Spring Meeting of the Japan Society of Applied Physics, 15/03/2012Publication In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates
Journal article2012, Thin Solid Films, (520) 8, p.3206-3210Publication MBE growth and crystalline properties of Ge1-xSnx heteroepitaxial layers
Meeting abstract2011-09, The 2nd GeSn workshop: GeSn Developments and Future Applications, 2/09/2011Publication Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer
Journal article2011, Applied Physics Letters, (98) 19, p.192110Publication Molecular beam passivation of Ge compounds: surface, interface & gate stack studies
Meeting abstract2011-09, The 2nd GeSn Workshop: GeSn Developments and Future Applications, 2/09/2011Publication Si passivation for Ge pMOSFETs: influence of Si precursor during RPCVD growth
Proceedings paper2010, 5th International SiGe Technology and Device Meeting - ISTDM, 24/05/2010Publication Towards an understanding of the atomic-scale surface properties of Ge1-xSnx films
Meeting abstract2011-09, The 2nd GeSn workshop: GeSn Developments and Future Applications, 2/09/2011Publication Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology
Journal article2010, Thin Solid Films, (518) 6, Suppl. 1, p.S48-S52