Browsing by Author "Zhang, W.D."
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Publication A novel trapping/detrapping model for defect profiling in high-k materials using the two-pulse capacitance-voltage technique
Journal article2010, IEEE Transactions on Electron Devices, (57) 10, p.2726-2735Publication Effects of detrapping on electron traps generated in gate oxides
Journal article2003, Semiconductor Science and Technology, (18) 2, p.174-182Publication Electron trap generation at different temperatures in the gate oxide
Oral presentation2002, 33rd IEEE Semiconductor Interface Specialists Conference - SISCPublication Electron trapping in HfAI0 high-k stack for Flash memory applications: an origin of Vth window closure during cyclling operations
Journal article2011-05, IEEE Transactions on Electron Devices, (58) 5, p.1344-1351Publication Energy and spatial distributions of electron traps throughout Sio2/Al2O3 stacks as the IPD in flash memory application
Journal article2010, IEEE Transactions on Electron Devices, (57) 1, p.288-296Publication Energy distribution of positive charges in high-k dielectric
Journal article2014, Microelectronics Reliability, (54) 9_10, p.2329-2333Publication Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells
Journal article2009, Microelectronic Engineering, (86) 7_9, p.1834-1837Publication Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization
Meeting abstract2013, 18th Conference of Insulting Films on Semiconductors - INFOS: Book of Abstracts, 25/06/2013, p.92-93Publication Statistical characterization of vertical poly-Si channel using charge pumping technique for 3D flash memory optimization
Journal article2013, Microelectronic Engineering, 109, p.39-42Publication Two types of electron traps generated in the gate silicon dioxide
Journal article2002, IEEE Trans. Electron Devices, (49) 11, p.1868-1875Publication Two-pulse C-V: a new method for characterization electron traps in the bulk of SiO2/high-k dielectric stacks
Journal article2008, IEEE Electron Device Letters, (29) 9, p.1043-1046Publication Which defect breaks down gate oxides?
Oral presentation2003, Semiconductor Interface Specialists Conference (SISC)