Browsing by author "Magnone, Paolo"
Now showing items 1-14 of 14
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A distributed electrical model for interdigitated back contact silicon solar cells
Giaffreda, Daniele; Debucquoy, Maarten; Magnone, Paolo; Posthuma, Niels; Fiegna, Claudio (2014) -
Buried silicon-germanium pMOSFETs: experimental analysis in VLSI logic circuits under aggressive voltage scaling
Crupi, Felice; Alioto, Massimo; Franco, Jacopo; Magnone, Paolo; Kaczer, Ben; Groeseneken, Guido; Mitard, Jerome; Witters, Liesbeth; Hoffmann, Thomas Y. (2012) -
Early assessment of emerging technologies for VLSI logic circuits from experimental measurements
Crupi, Felice; Magnone, Paolo; Alioto, Massimo; Franco, Jacopo; Groeseneken, Guido (2012) -
Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling
Crupi, Felice; Alioto, Massimo; Franco, Jacopo; Magnone, Paolo; Kaczer, Ben; Groeseneken, Guido; Mitard, Jerome; Witters, Liesbeth; Hoffmann, Thomas Y. (2011) -
Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise
Magnone, Paolo; Crupi, Felice; Pantisano, Luigi; Pace, Calogero (2007-02) -
Gate voltage and geometry dependence of the series resistance and of the carrier mobility in FinFET devices
Magnone, Paolo; Subramanian, Vaidy; Parvais, Bertrand; Mercha, Abdelkarim; Pace, Calogero; Dehan, Morin; Decoutere, Stefaan; Groeseneken, Guido; Crupi, Felice; Pierro, Silvio (2008) -
High-mobility 0.85nm-EOT Si0.45Ge0.55 pFETs: delivering high performance at scaled VDD
Mitard, Jerome; Witters, Liesbeth; Garcia Bardon, Marie; Christie, Phillip; Franco, Jacopo; Mercha, Abdelkarim; Magnone, Paolo; Crupi, Felice; Ragnarsson, Lars-Ake; Hikavyy, Andriy; Vincent, Benjamin; Chiarella, Thomas; Loo, Roger; Tseng, Joshua; Yamaguchi, Shinpei; Takeoka, Shinji; Wang, Wei-E; Absil, Philippe; Hoffmann, Thomas Y. (2010) -
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
Tallarico, Andrea; Stoffels, Steve; Magnone, Paolo; Posthuma, Niels; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio (2017) -
Matching performance of FinFET devices with fin widths down to 10nm
Magnone, Paolo; Mercha, Abdelkarim; Subramanian, Vaidy; Parvais, Bertrand; Collaert, Nadine; Dehan, Morin; Decoutere, Stefaan; Groeseneken, Guido; Benson, Jim; Merelle, Thomas; Lander, Rob; Crupi, Felice; Pace, C. (2009) -
On the impact of defects close to the gate electrode on the low-frequency 1/f noise
Magnone, Paolo; Pantisano, Luigi; Crupi, Felice; Trojman, Lionel; Pace, Calogero; Giusi, Gino (2008-09) -
PBTI in GaN-HEMT's with p-type gate: role of the aluminum content on DVtH and underlying degradation mechanisms
Tallarico, Andrea; Stoffels, Steve; Posthuma, Niels; Magnone, Paolo; Marcon, Denis; Decoutere, Stefaan; Sangiorgi, Enrico; Fiegna, Claudio (2018) -
Understanding the basic advantages of bulk FinFETs for sub- and near-threshold logic from device measurements
Crupi, Felice; Alioto, Massimo; Franco, Jacopo; Magnone, Paolo; Togo, Mitsuhiro; Horiguchi, Naoto; Groeseneken, Guido (2012) -
Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode apacing length dependence
Tallarico, Andrea; Magnone, Paolo; Stoffels, Steve; Lenci, Silvia; Hu, Jie; Marcon, Denis; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio (2016) -
Understanding the influence of busbars in large-area IBC solar cells by distributed SPICE simulations
Magnone, Paolo; Debucquoy, Maarten; Giaffreda, Daniele; Posthuma, Niels; Fiegna, Claudio (2015)