Browsing by author "Weeks, Doran"
Now showing items 1-7 of 7
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High efficiency low temperature pre-epi clean method for advanced group IV epi processing
Machkaoutsan, Vladimir; Weeks, Doran; Bauer, Matthias; Maes, Jan; Tolle, John; Thomas, Shawn; Alian, AliReza; Hikavyy, Andriy; Loo, Roger (2012-09) -
High efficiency low temperature pre-epi clean method for advanced group IV epi processing
Machkaoutsan, Vladimir; Weeks, Doran; Bauer, Matthias; Maes, Jan; Tolle, John; Thomas, Shawn; Alian, AliReza; Hikavyy, Andriy; Loo, Roger (2012) -
Low-temperature pre-epitaxy surface cleaning of Si and SiGe
Profijt, Harald; Suhard, Samuel; Rosseel, Erik; Tolle, John; Mertens, Hans; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Weeks, Doran; Holsteyns, Frank; Loo, Roger; Mehta, Sandeep; Maes, Jan (2015-05) -
Orientation dependence of Si1-xCx:P growth and the impact on FinFET structues
Tolle, John; Weeks, Doran; Bauer, Matthias; Machkaoutsan, Vladimir; Maes, Jan; Togo, Mitsuhiro; Brus, Stephan; Hikavyy, Andriy; Loo, Roger (2012) -
Orientation dependence of Si1-xCx:P growth and the impact on FiNFET structures
Tolle, John; Weeks, Doran; Bauer, Matthias; Machkaoutsan, Vladimir; Maes, Jan; Togo, Mitsuhiro; Brus, Stephan; Hikavyy, Andriy; Loo, Roger (2012-10) -
SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET
Bauer, Matthias; Machkaoutsan, Vladimir; Zhang, Y.; Weeks, Doran; Spear, Jennifer; Thomas, Shawn; Verheyen, Peter; Kerner, Christoph; Clemente, Francesca; Bender, Hugo; Shamiryan, Denis; Loo, Roger; Hikavyy, Andriy; Hoffmann, Thomas Y.; Absil, Philippe; Biesemans, Serge (2008) -
Strain enhanced NMOS using in situ doped embedded Si1-xCx S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process
Verheyen, Peter; Machkaoutsan, Vladimir; Bauer, Matthias; Weeks, Doran; Kerner, Christoph; Bender, Hugo; Shamiryan, Denis; Loo, Roger; Hoffmann, Thomas; Absil, Philippe; Biesemans, Serge; Thomas, Shawn G. (2008-06)