Browsing by author "Hall, S."
Now showing items 1-7 of 7
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Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack
Benbakhti, B.; Zhang, J.F.; Li, Z.; Zhang, W; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2012) -
Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack
Ma, J.; Zhang, J.F.; Ji, Zhigang; Benbakhti, Brahim; Zhang, Wei Dong; Zheng, Xue Feng; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2014) -
Energy distribution of positive charges in Al2O3/GeO2/Ge pMOSFETs
Ma, J; Zhang, J. F.; Ji, Zhigang; Benbakhti, Brahim; Zhang, Wei; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2014) -
Extrinsic stacking fault generation related to high-k dielectric growth on a Si substrate
Volkos, S.N.; Bernardini, S.; Rigopoulos, N.; Efthymiou, E.S.; Hawkins, I.D.; Hamilton, B.; Dobaczewski, L.; Hall, S.; Hurley, P.K; Delabie, Annelies; Peaker, A.R (2007) -
Hydrogen induced positive charge in Hf-based dielectrics
Zhao, C.Z.; Zhang, J.F.; Zahid, Mohammed; Efthymiou, E.; Lu, Y.; Hall, S.; Peaker, A.R.; Groeseneken, Guido; Pantisano, Luigi; Degraeve, Robin; De Gendt, Stefan; Heyns, Marc (2007) -
Process-induced positive charges in Hf-based gate stacks
Zhao, C.Z.; Zhang, J.F.; Chang, M.H.; Peaker, A.R.; Hall, S.; Groeseneken, Guido; Pantisano, Luigi; De Gendt, Stefan; Heyns, Marc (2008) -
Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure
Ma, J; Zhang, J.F.; Ji, Z.; Benbakhti, B.; Duan, M.; Zhang, W.; Zheng, X.F.; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2013)