Browsing by author "Fadida, Sivan"
Now showing items 1-6 of 6
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Band alignment of Hf–Zr oxides on Al2O3/GeO2/Ge stacks
Fadida, Sivan; Eisenberg, Moshe; Nyns, Laura; Van Elshocht, Sven; Caymax, Matty (2011) -
Correlation between current-voltage measurements and the barrier height determined by XPS in Ge p-MOS capacitors
Fadida, Sivan; Palumbo, F; Nyns, Laura; Lin, Dennis; Van Elshocht, Sven; Caymax, Matty; Eizenberg, Moshe (2013) -
Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack
Fadida, Sivan; Shekhter, P.; Cvetko, D.; Floreano, L.; Verdini, A; Nyns, Laura; Van Elshocht, Sven; Kymissis, I.; Eizenberg, Moshe (2014) -
Effect of remote oxygen scavenging on electrical properties of Ge-based metal-oxide-semiconductor capacitors
Fadida, Sivan; Nyns, Laura; Van Elshocht, Sven; Eizenberg, Moshe (2017) -
Hf-based high-k dielectrics for p-Ge MOS gate stacks
Fadida, Sivan; Palumbo, Felix; Nyns, Laura; Lin, Dennis; Van Elshocht, Sven; Caymax, Matty; Eizenberg, Moshe (2014) -
Ti as a reactive gate electrode on high-k/p-Ge MOS capacitors
Fadida, Sivan; Nyns, Laura; Lin, Dennis; Van Elshocht, Sven; Caymax, Matty; Eizenberg, Moshe (2014)