Browsing by author "Hooker, Jacob"

Now showing items 21-28 of 28

    • Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors 

      Schram, Tom; Ragnarsson, Lars-Ake; Lujan, Guilherme; Deweerd, Wim; Chen, Jerry; Tsai, Wilman; Henson, Kirklen; Lander, Rob; Hooker, Jacob; Vertommen, Johan; De Meyer, Kristin; De Gendt, Stefan; Heyns, Marc (2005-03)

    • Reliability degradation of HfSiO gate dielectric layers: influence of nitridation 

      Vellianitis, G.; Petry, Jasmine; Hooker, Jacob; Delabie, Annelies; De Gendt, Stefan (2007)

    • Scaling of Hf-based high-k dielectrics 

      Heyns, Marc; Beckx, Stephan; Caymax, Matty; Chen, J.; Claes, Martine; Coenegrachts, Bart; De Gendt, Stefan; Degraeve, R.; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Hayashi, Shigenori; Henson, Kirklen; Hooker, Jacob; Houssa, Michel; Kauerauf, Thomas; Kerber, A.; Kwak, Dong Hwa; Lander, Rob; Lujan, Guilherme; Niwa, Masaaki; Pantisano, Luigi; Puurunen, Riikka; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Shimamoto, Y.; Tsai, Wilman; Van Elshocht, Sven; Vertommen, Johan; Vandervorst, Wilfried; Kubicek, Stefan (2004)

    • Tall triple-gate device with TiN/HfO2 gate stack 

      Collaert, Nadine; Demand, Marc; Ferain, Isabelle; Lisoni, Judit; Singanamalla, Raghunath; Zimmerman, Paul; Yim, Yong Sik; Schram, Tom; Mannaert, Geert; Goodwin, Michael; Hooker, Jacob; Neuilly, Francois; Kim, Myeong-Cheol; De Meyer, Kristin; De Gendt, Stefan; Boullart, Werner; Jurczak, Gosia; Biesemans, Serge (2005)

    • TaN metal gate MOSFETs with agressively scaled HfO2 dielectrics 

      Lander, Rob; Schram, Tom; Lujan, Guilherme; Hooker, Jacob; Vertommen, Johan; Lee, S.; Deweerd, Wim; Boullart, Werner; Van Elshocht, Sven; Carter, Richard; Kubicek, Stefan; De Meyer, Kristin; De Gendt, Stefan; Heyns, Marc (2003)

    • Tantalum-based gate electrode metals for advanced CMOS devices 

      Hooker, Jacob; Lander, Rob; Cubaynes, Florence; Schram, Tom; Roozeboom, F.; van Zijl, J.; Maas, M.; van den Heuvel, F.C.; Naburgh, E.; van Berkum, J.G.M.; Tamminga, Y.; Dao, T.; Henson, Kirklen; Schaekers, Marc; Van Ammel, Annemie; Tokei, Zsolt; Demand, Marc; Dachs, C. (2005)

    • Te-induced modulation of the Mo/HfO2 interface effective work function 

      Xiong, Ka; Delugas, Pietro; Hooker, Jacob; Fiorentini, Vincenzo; Roberston, John; Liu, Dameng; Pourtois, Geoffrey (2008)

    • Tuning PMOS Mo(O,N) metal gates to NMOS by addition of DyO capping layer 

      Petry, Jasmine; Singanamalla, Raghunath; Xiong, K.; Ravit, C.; Simoen, Eddy; O'Connor, Robert; Veloso, Anabela; Adelmann, Christoph; Van Elshocht, Sven; Paraschiv, Vasile; Brus, Stephan; Van Berkum, J.; Kubicek, Stefan; De Meyer, Kristin; Biesemans, Serge; Hooker, Jacob (2007)