Browsing by author "Chen, Yangyin"
Now showing items 21-40 of 64
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First principles simulations of oxygen diffusion in RRAM materials
Clima, Sergiu; Sankaran, Kiroubanand; Mees, Maarten; Chen, Yangyin; Goux, Ludovic; Govoreanu, Bogdan; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia; Pourtois, Geoffrey (2012) -
First-principles simulation of oxygen diffusion in HfOx: role in the resistive switching mechanism
Clima, Sergiu; Chen, Yangyin; Degraeve, Robin; Mees, Maarten; Sankaran, Kiroubanand; Govoreanu, Bogdan; Jurczak, Gosia; De Gendt, Stefan; Pourtois, Geoffrey (2012-03) -
First-principles thermodynamic and kinetic aspects of the switching in Cu-based and HfOx-based RRAM stacks
Clima, Sergiu; Sankaran, Kiroubanand; Degraeve, Robin; Chen, Yangyin; Fantini, Andrea; Goux, Ludovic; Govoreanu, Bogdan; Jurczak, Gosia; Pourtois, Geoffrey (2014) -
First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device
Clima, Sergiu; Chen, Yangyin; Chen, Michael; Goux, Ludovic; Govoreanu, Bogdan; Degraeve, Robin; Fantini, Andrea; Jurczak, Gosia; Pourtois, Geoffrey (2016) -
Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized Plasma Enhanced Atomic Layer Deposition (PEALD) process for TiN electrode
Chen, Yangyin; Goux, Ludovic; Pantisano, Luigi; Swerts, Johan; Adelmann, Christoph; Mertens, Sofie; Afanasiev, Valeri; Wang, Xin Peng; Govoreanu, Bogdan; Degraeve, Robin; Kubicek, Stefan; Paraschiv, Vasile; Verbrugge, Beatrijs; Jossart, Nico; Altimime, Laith; Jurczak, Gosia; Kittl, Jorge; Groeseneken, Guido; Wouters, Dirk (2011) -
Hf cap thickness dependence in bipolar-switching TiN\HfO2\Hf\TiN RRAM
Chen, Yangyin; Pourtois, Geoffrey; Clima, Sergiu; Goux, Ludovic; Govoreanu, Bogdan; Fantini, Andrea; Degraeve, Robin; Kar, Gouri Sankar; Groeseneken, Guido; Wouters, Dirk; Jurczak, Gosia (2013) -
Hf cap thickness dependence in bipolar-switching TiN\HfO2\Hf\TiN RRAM device
Chen, Yangyin; Pourtois, Geoffrey; Clima, Sergiu; Govoreanu, Bogdan; Goux, Ludovic; Fantini, Andrea; Degraeve, Robin; Groeseneken, Guido; Wouters, Dirk; Jurczak, Gosia (2012) -
High-drive current (>1MA/cm2), highly nonlinear (>103) TiN/amorphous-silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance
Zhang, Leqi; Redolfi, Augusto; Crotti, Davide; Adelmann, Christoph; Clima, Sergiu; Chen, Yangyin; Opsomer, Karl; Subhechha, Subhali; Wouters, Dirk; Groeseneken, Guido; Jurczak, Gosia; Govoreanu, Bogdan; Cosemans, Stefan; Richard, Olivier; Bender, Hugo; Hendrickx, Paul; Witters, Thomas; Hody, Hubert; Paraschiv, Vasile; Radu, Iuliana (2014) -
Hydrogen-induced resistive switching in TiN/ALD HfO2/PEALD TiN RRAM device
Chen, Yangyin; Goux, Ludovic; Swerts, Johan; Toeller, Michael; Adelmann, Christoph; Kittl, Jorge; Jurczak, Gosia; Groeseneken, Guido; Wouters, Dirk (2012) -
Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current
Chen, Yangyin; Komura, Masanori; Degraeve, Robin; Govoreanu, Bogdan; Goux, Ludovic; Fantini, Andrea; Raghavan, Naga; Clima, Sergiu; Zhang, Leqi; Belmonte, Attilio; Redolfi, Augusto; Kar, Gouri Sankar; Groeseneken, Guido; Wouters, Dirk; Jurczak, Gosia (2013) -
Influence of process parameters on low current resistive switching in MOCVD and ALD NiO Films
Wang, Xin Peng; Wouters, Dirk; Toeller, Michael; Meersschaut, Johan; Goux, Ludovic; Chen, Yangyin; Govoreanu, Bogdan; Pantisano, Luigi; Degraeve, Robin; Jurczak, Gosia; Altimime, Laith; Kittl, Jorge (2011) -
Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device
Chen, Yangyin; Pourtois, Geoffrey; Adelmann, Christoph; Goux, Ludovic; Govoreanu, Bogdan; Degraeve, Robin; Jurczak, Gosia; Kittl, Jorge; Groeseneken, Guido; Wouters, Dirk (2012) -
Intrinsic switching behavior in HfO2 RRAM by fast electrical measurments on novel 2R test structures
Fantini, Andrea; Wouters, Dirk; Degraeve, Robin; Goux, Ludovic; Pantisano, Luigi; Kar, Gouri Sankar; Chen, Yangyin; Govoreanu, Bogdan; Kittl, Jorge; Altimime, Laith; Jurczak, Gosia (2012) -
Intrinsic switching variability in HfO2 RRAM: A theoretical and experimental study
Fantini, Andrea; Goux, Ludovic; Degraeve, Robin; Wouters, Dirk; Raghavan, Praveen; Kar, Gouri Sankar; Belmonte, Attilio; Chen, Yangyin; Govoreanu, Bogdan; Jurczak, Gosia (2013) -
Intrinsic tailing of LRS/HRS distributions in amorphous HfO and TaO based RRAM
Clima, Sergiu; Chen, Yangyin; Fantini, Andrea; Goux, Ludovic; Degraeve, Robin; Govoreanu, Bogdan; Pourtois, Geoffrey; Jurczak, Gosia (2015) -
Investigation of forming and its controllability in novel HfO2-based 1T1R 40nm-crossbar RRAM cells
Govoreanu, Bogdan; Kubicek, Stefan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Rakowski, Michal; Degraeve, Robin; Goux, Ludovic; Clima, Sergiu; Jossart, Nico; Adelmann, Christoph; Richard, Olivier; Raes, Thomas; Vangoidsenhoven, Diziana; Vandeweyer, Tom; Tielens, Hilde; Kellens, Kristof; Devriendt, Katia; Heylen, Nancy; Brus, Stephan; Verbrugge, Beatrijs; Pantisano, Luigi; Bender, Hugo; Pourtois, Geoffrey; Kittl, Jorge; Wouters, Dirk; Altimime, Laith; Jurczak, Gosia (2011) -
Lateral and vertical scaling impact on statistical performances and reliability of 10nm TiN/Hf(Al)O/Hf/TiN RRAM devices
Fantini, Andrea; Goux, Ludovic; Redolfi, Augusto; Degraeve, Robin; Kar, Gouri Sankar; Chen, Yangyin; Jurczak, Gosia (2014) -
Modeling and tuning the filament properties in RRAM metal oxide stacks for optimized stable cycling
Degraeve, Robin; Goux, Ludovic; Clima, Sergiu; Govoreanu, Bogdan; Chen, Yangyin; Kar, Gouri Sankar; Roussel, Philippe; Pourtois, Geoffrey; Wouters, Dirk; Altimime, Laith; Jurczak, Gosia; Groeseneken, Guido; Kittl, Jorge (2012) -
Modeling RRAM SET and RESET statistics with guidelines for optimized operation
Degraeve, Robin; Fantini, Andrea; Raghavan, Naga; Chen, Yangyin; Goux, Ludovic; Clima, Sergiu; Cosemans, Stefan; Govoreanu, Bogdan; Wouters, Dirk; Roussel, Philippe; Kar, Gouri Sankar; Groeseneken, Guido; Jurczak, Gosia (2013) -
On the bipolar resistive switching memory using TiN/Hf/HfO2/Si MIS structure
Wu, Yung-Hsien; Wouters, Dirk; Hendrickx, Paul; Zhang, Leqi; Chen, Yangyin; Goux, Ludovic; Fantini, Andrea; Groeseneken, Guido; Jurczak, Gosia (2013)