Browsing by author "Zheng, X.F."
Now showing items 1-5 of 5
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Electron trapping in HfAI0 high-k stack for Flash memory applications: an origin of Vth window closure during cyclling operations
Zheng, X.F.; Robinson, Colin; Zhang, W.D.; Zhang, Jian Fu; Govoreanu, Bogdan; Van Houdt, Jan (2011-05) -
Energy and spatial distributions of electron traps throughout Sio2/Al2O3 stacks as the IPD in flash memory application
Zheng, X.F.; Zhang, W.D.; Govoreanu, Bogdan; Ruiz Aguado, Daniel; Zhang, .F.; Van Houdt, Jan (2010) -
Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells
Zheng, X.F.; Zhang, W.D.; Govoreanu, Bogdan; Zhang, J.F.; Van Houdt, Jan (2009) -
Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure
Ma, J; Zhang, J.F.; Ji, Z.; Benbakhti, B.; Duan, M.; Zhang, W.; Zheng, X.F.; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2013) -
Two-pulse C-V: a new method for characterization electron traps in the bulk of SiO2/high-k dielectric stacks
Zhang, W.D.; Govoreanu, Bogdan; Zheng, X.F.; Ruiz Aguado, Daniel; Rosmeulen, Maarten; Blomme, Pieter; Zhang, J.F.; Van Houdt, Jan (2008)