Browsing by author "Reisinger, Hans"
Now showing items 1-18 of 18
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Advanced modeling of oxide defects for random telegraph noise
Goes, Wolfgang; Schanovsky, Franz; Grasser, Tibor; Reisinger, Hans; Kaczer, Ben (2011-06) -
Analytic modeling of the bias temperature instability using capture/emission time maps
Grasser, Tibor; Wagner, Paul-Jurgen; Reisinger, Hans; Aichinger, T.; Pobegen, G.; Nelhiebel, M.; Kaczer, Ben (2011-12) -
'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their interactions
Bukhori, M. F.; Grasser, Tibor; Kaczer, Ben; Reisinger, Hans; Asenov, Asen (2010-10) -
Bistable defects as the cause for NBTI and RTN
Goes, Wolfgang; Schanovsky, Franz; Reisinger, Hans; Kaczer, Ben; Grasser, Tibor (2011-08) -
Extraction of the lateral position of border traps in nanoscale MOSFETs
Illarionov, Yury; Bina, Markus; Tyaginov, Stanislav; Rott, Karina; Kaczer, Ben; Reisinger, Hans; Grasser, Tibor (2015) -
Mixed hot-carrier/bias temperature instability degradation regimes in full {VG, VD} bias space: implications and peculiarities
Jech, Markus; Rott, Gunnar; Reisinger, Hans; Tyaginov, Stanislav; Rzepa, Gerhard; Grill, Alexander; Jabs, Dominic; Jungemann, Christoph; Waltl, Michael; Grasser, Tibor (2020) -
On the 'permanent' component of NBTI
Grasser, Tibor; Aichinger, Thomas; Reisinger, Hans; Franco, Jacopo; Wagner, Paul-Jürgen; Nelhiebel, M.; Ortolland, Claude; Kaczer, Ben (2010) -
On the frequency dependence of the bias temperature instability
Grasser, Tibor; Kaczer, Ben; Reisinger, Hans; Wagner, Paul-Jurgen; Toledano Luque, Maria (2012) -
On the microscopic origin of the frequency dependence of hole trapping in pMOSFETs
Grasser, Tibor; Reisinger, Hans; Rott, Karina; Toledano Luque, Maria; Kaczer, Ben (2012-12) -
Origin of NBTI variability in deeply scaled pFETs
Kaczer, Ben; Grasser, Tibor; Roussel, Philippe; Franco, Jacopo; Degraeve, Robin; Ragnarsson, Lars-Ake; Simoen, Eddy; Groeseneken, Guido; Reisinger, Hans (2010-05) -
Oxide traps in MOS transistors: semi-automatic extraction of trap parameters from time dependent defect spectroscopy
Wagner, Paul-Jurgen; Grasser, Tibor; Reisinger, Hans; Kaczer, Ben (2010-07) -
Recent advances in understanding the bias temperature instability
Grasser, Tibor; Kaczer, Ben; Goes, Wolfgang; Reisinger, Hans; Aichinger, Thomas; Hehenberger, Phillip; Wagner, Paul-Jurgen; Schanovsky, Franz; Franco, Jacopo; Roussel, Philippe; Nelhiebel, M (2010-12) -
SrTiOx for sub-20 nm DRAM technology nodes - characterization and modeling
Kaczer, Ben; Larcher, Luca; Vandelli, Luca; Reisinger, Hans; Popovici, Mihaela Ioana; Clima, Sergiu; Ji, Zhigang; Joshi, Saumya; Swerts, Johan; Redolfi, Augusto; Afanasiev, Valeri; Jurczak, Gosia (2015) -
Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise
Grasser, Tibor; Reisinger, Hans; Goes, Wolfgang; Aichinger, Thomas; Hehenberger, Phillip; Wagner, Paul-Jurgen; Nelheibel, M.; Franco, Jacopo; Kaczer, Ben (2009) -
The "permanent" component of NBTI: composition and annealing
Grasser, Tibor; Aichinger, Thomas; Pobegen, Gregor; Reisinger, Hans; Wagner, Paul-Jurgen; Franco, Jacopo; Nelhiebel, M.; Kaczer, Ben (2011-04) -
The paradigm shift in understanding the bias temperature instability: from reaction–diffusion to switching oxide traps
Grasser, Tibor; Kaczer, Ben; Goes, Wolfgang; Reisinger, Hans; Aichinger, Thomas; Hehenberger, Phillip; Wagner, Paul-Jurgen; Schanovsky, Franz; Franco, Jacopo; Toledano Luque, Maria; Nelhiebel, M (2011) -
The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability
Grasser, Tibor; Reisinger, Hans; Wagner, Paul-Jurgen; Schanovsky, Franz; Goes, Wolfgang; Kaczer, Ben (2010-05) -
Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors
Grasser, Tibor; Reisinger, Hans; Wagner, Paul-Jurgen; Kaczer, Ben (2010-12)