Browsing by author "Benbakhti, B."
Now showing items 1-6 of 6
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AC NBTI of Ge pMOSFETs: impact of energy alternating defects on lifetime prediction
Ma, J.; Zhang, W.; Zhang, J.F.; Ji, Z.; Benbakhti, B.; Franco, Jacopo; Mitard, Jerome; Witters, Liesbeth; Collaert, Nadine; Groeseneken, Guido (2015) -
Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack
Benbakhti, B.; Zhang, J.F.; Li, Z.; Zhang, W; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2012) -
Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes
Barkad, H.A.; Soltani, A.; Mattalah, M.; Gerbedoen, J.C.; Rousseau, M.; de Jaeger, J.C.; Benmoussa, A.; Mortet, Vincent; Haenen, Ken; Benbakhti, B.; Moreau, M.; Dupuis, R.; Ougazzaden, A. (2010) -
Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvement
Ma, Jigang; Chai, Zheng; Zhang, Weidong; Govoreanu, Bogdan; Zhang, Jiang F.; Ji, Z.; Benbakhti, B.; Groeseneken, Guido; Jurczak, Malgorzata (2016) -
Interaction between hot carrier aging and PBTI degradation in nMOSFETs: characterization, modelling and lifetime prediction
Meng, D.; Zhang, J. F.; Zhang, J. C.; Zhang, W.; Ji, Z.; Benbakhti, B.; Zheng, X. F.; Hao, Y.; Vigar, D.; Adamu-Lema, F.; Chandra, V.; Aitken, R.; Kaczer, Ben; Groeseneken, Guido; Asenov, A. (2017) -
Towards understanding hole traps and NBTI of Ge/GeO2/Al2O3 structure
Ma, J; Zhang, J.F.; Ji, Z.; Benbakhti, B.; Duan, M.; Zhang, W.; Zheng, X.F.; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2013)