Browsing by author "Hendrickx, Paul"
Now showing items 1-20 of 23
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10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
Govoreanu, Bogdan; Kar, Gouri Sankar; Chen, Yangyin; Paraschiv, Vasile; Kubicek, Stefan; Fantini, Andrea; Radu, Iuliana; Goux, Ludovic; Clima, Sergiu; Degraeve, Robin; Jossart, Nico; Richard, Olivier; Vandeweyer, Tom; Seo, Kyungah; Hendrickx, Paul; Pourtois, Geoffrey; Bender, Hugo; Altimime, Laith; Wouters, Dirk; Kittl, Jorge; Jurczak, Gosia (2011) -
A 1Mbit HIMOS® flash memory embedded in a 0.35μm CMOS process
Van Houdt, Jan; Tsouhlarakis, Jorgo; Hendrickx, Paul; Vanhorebeek, Guido; Wellekens, Dirk; Haspeslagh, Luc; Deferm, Ludo; Maes, Herman (2000) -
A flash memory technology with quasi-virtual ground array for low-cost embedded applications
Tsouhlarakis, Jorgo; Vanhorebeek, Guido; Verhoeven, Geert; De Blauwe, Jan; Kim, Shi-Ho; Wellekens, Dirk; Hendrickx, Paul; Haspeslagh, Luc; Van Houdt, Jan; Maes, Herman (2001) -
A low-cost poly-sidewall erase HIMOSTM technology for 130-90nm embedded flash memories
Van Houdt, Jan; Haspeslagh, Luc; Wellekens, Dirk; De Vos, Joeri; Hendrickx, Paul; Tsouhlarakis, Jorgo (2004) -
Analytical model for failure rate prediction due to anomalous charge loss of Flash memories
Degraeve, Robin; Schuler, Franz; Lorenzini, Martino; Wellekens, Dirk; Hendrickx, Paul; Van Houdt, Jan; Haspeslagh, Luc; Groeseneken, Guido; Tempel, Georg (2001) -
Analytical percolation model for predicting anomalous charge loss in flash memories
Degraeve, Robin; Schuler, Franz; Kaczer, Ben; Lorenzini, Martino; Wellekens, Dirk; Hendrickx, Paul; Van Duuren, Michiel; Dormans, G.J.M.; Van Houdt, Jan; Haspeslagh, Luc; Groeseneken, Guido; Tempel, Georg (2004) -
Band edge work function metal gates using PEALD TaCN electrodes
Maes, Jan; Swerts, Johan; Pierreux, Dieter; Machkaoutsan, Vladimir; Marcus, Steven; Milligan, Brennan; Schram, Tom; Ragnarsson, Lars-Ake; Cacciato, Antonio; Rohr, Erika; Rothschild, Aude; Hendrickx, Paul; Breuil, Laurent; Van den Bosch, Geert (2009) -
Channel hot electron injection versus Fowler-Nordheim tunneling for multilevel charge storage in non-volatile memories
Montanari, Donato; Van Houdt, Jan; Wellekens, Dirk; Hendrickx, Paul; Groeseneken, Guido; Maes, Herman (1997) -
Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications
Ackaert, Jan; Lowe, Antony; Boonen, Sylvie; Yao, Thierry; Rayhem, Joseph; Desoete, Bart; Prasad, Jagdish; Thomason, Mike; Van Houdt, Jan; Degraeve, Robin; Haspeslagh, Luc; Hendrickx, Paul (2004) -
Characterization of tunnel oxides for non-volatile memory (NVM) applications
Ackaert, Jan; Vermeulen, Tom; Lowe, Antony; Boonen, Sylvie; Yao, Thierry; Prasad, Jagdish; Thomason, Mike; Van Houdt, Jan; Degraeve, Robin; Haspeslagh, Luc; Hendrickx, Paul (2003) -
Comparison of the suitability of various programming mechanisms used for multilevel non-volatile information storage
Montanari, Donato; Van Houdt, Jan; Wellekens, Dirk; Hendrickx, Paul; Groeseneken, Guido; Maes, Herman (1996) -
Embedded HIMOS® Flash Memory in 0.35 μm and 0.25 μm CMOS Technologies
Wellekens, Dirk; Van Houdt, Jan; Haspeslagh, Luc; Tsouhlarakis, Jorgo; Hendrickx, Paul; Deferm, Ludo; Maes, Herman (2000) -
Failure rate prediction and accelerated detection of anomalous charge loss in flash memories by using an analytical transient physics-based charge loss model
Schuler, Franz; Tempel, Georg; Melzner, H.; Jacob, M.; Hendrickx, Paul; Wellekens, Dirk; Van Houdt, Jan (2002) -
Field and cycling dependence of anomalous charge loss in flash memory cells
Wellekens, Dirk; Hendrickx, Paul; Schuler, Franz; Van Houdt, Jan (2001) -
High-drive current (>1MA/cm2), highly nonlinear (>103) TiN/amorphous-silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance
Zhang, Leqi; Redolfi, Augusto; Crotti, Davide; Adelmann, Christoph; Clima, Sergiu; Chen, Yangyin; Opsomer, Karl; Subhechha, Subhali; Wouters, Dirk; Groeseneken, Guido; Jurczak, Gosia; Govoreanu, Bogdan; Cosemans, Stefan; Richard, Olivier; Bender, Hugo; Hendrickx, Paul; Witters, Thomas; Hody, Hubert; Paraschiv, Vasile; Radu, Iuliana (2014) -
Low voltage low cost nitride embedded flash memory cell
Xue, Gang; Van Houdt, Jan; Wellekens, Dirk; Haspeslagh, Luc; Hendrickx, Paul; De Vos, Joeri; Maes, Herman (2003) -
On the bipolar resistive switching memory using TiN/Hf/HfO2/Si MIS structure
Wu, Yung-Hsien; Wouters, Dirk; Hendrickx, Paul; Zhang, Leqi; Chen, Yangyin; Goux, Ludovic; Fantini, Andrea; Groeseneken, Guido; Jurczak, Gosia (2013) -
Opportunities and challenges of resistive RAM for neuromorphic applications
Degraeve, Robin; Mallik, Arindam; Garbin, Daniele; Doevenspeck, Jonas; Fantini, Andrea; Rodopoulos, Dimitrios; Roussel, Philippe; Govoreanu, Bogdan; Hendrickx, Paul; Di Piazza, Luca; Stuijt, Jan; Schaafsma, Siebren; Debacker, Peter; Donadio, Gabriele Luca; Hody, Hubert; Goux, Ludovic; Kar, Gouri Sankar; Furnemont, Arnaud; Mocuta, Anda; Verkest, Diederik (2018) -
Physical charge transport models for anomalous leakage current in floating gate-based nonvolatile memory cells
Schuler, Franz; Degraeve, Robin; Hendrickx, Paul; Wellekens, Dirk (2002) -
Physical description of anomalous charge loss in floating gate based NVM and identification of its dominant parameter
Schuler, Franz; Degraeve, Robin; Hendrickx, Paul; Wellekens, Dirk (2002)