Browsing by author "Yim, Yong Sik"
Now showing items 1-6 of 6
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25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions
Verheyen, Peter; Collaert, Nadine; Rooyackers, Rita; Loo, Roger; Shamiryan, Denis; De Keersgieter, An; Eneman, Geert; Leys, Frederik; Dixit, Abhisek; Goodwin, Michael; Yim, Yong Sik; Caymax, Matty; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach
Kottantharayil, Anil; Verheyen, Peter; Collaert, Nadine; Dixit, Abhisek; Kaczer, Ben; Snow, Jim; Vos, Rita; Locorotondo, Sabrina; Degroote, Bart; Shi, Xiaoping; Rooyackers, Rita; Mannaert, Geert; Brus, Stephan; Yim, Yong Sik; Lauwers, Anne; Goodwin, Michael; Kittl, Jorge; Van Dal, Mark; Richard, Olivier; Veloso, Anabela; Kubicek, Stefan; Beckx, Stephan; Boullart, Werner; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
GIDL (gate-induced drain leakage) and parasitic Schottky barrier leakage elimination in aggressively scaled HfO2/TiN FiNFET devices
Hoffmann, Thomas Y.; Doornbos, Gerben; Ferain, Isabelle; Collaert, Nadine; Zimmerman, Paul; Goodwin, Michael; Rooyackers, Rita; Kottantharayil, Anil; Yim, Yong Sik; Dixit, Abhisek; De Meyer, Kristin; Jurczak, Gosia; Biesemans, Serge (2005) -
Integration challenges for multi-gate devices
Collaert, Nadine; Brus, Stephan; De Keersgieter, An; Dixit, Abhisek; Ferain, Isabelle; Goodwin, Michael; Kottantharayil, Anil; Rooyackers, Rita; Verheyen, Peter; Yim, Yong Sik; Zimmerman, Paul; Beckx, Stephan; Degroote, Bart; Demand, Marc; Kim, Myeong-Cheol; Kunnen, Eddy; Locorotondo, Sabrina; Mannaert, Geert; Neuilly, Francois; Shamiryan, Denis; Baerts, Christina; Ercken, Monique; Laidler, David; Leys, Frederik; Loo, Roger; Lisoni, Judit; Snow, Jim; Vos, Rita; Boullart, Werner; Pollentier, Ivan; De Gendt, Stefan; De Meyer, Kristin; Jurczak, Gosia; Biesemans, Serge (2005) -
NMOS and PMOS triple gate devices with mid-gap metal gate on oxynitride and Hf based gate dielectrics
Henson, Kirklen; Collaert, Nadine; Demand, Marc; Goodwin, Michael; Brus, Stephan; Rooyackers, Rita; Van Ammel, Annemie; Degroote, Bart; Ercken, Monique; Baerts, Christina; Kottantharayil, Anil; Dixit, Abhisek; Beckx, Stephan; Schram, Tom; Deweerd, Wim; Boullart, Werner; Schaekers, Marc; De Gendt, Stefan; De Meyer, Kristin; Yim, Yong Sik; Hooker, Jacob; Jurczak, Gosia; Biesemans, Serge (2005) -
Tall triple-gate device with TiN/HfO2 gate stack
Collaert, Nadine; Demand, Marc; Ferain, Isabelle; Lisoni, Judit; Singanamalla, Raghunath; Zimmerman, Paul; Yim, Yong Sik; Schram, Tom; Mannaert, Geert; Goodwin, Michael; Hooker, Jacob; Neuilly, Francois; Kim, Myeong-Cheol; De Meyer, Kristin; De Gendt, Stefan; Boullart, Werner; Jurczak, Gosia; Biesemans, Serge (2005)