Browsing by author "Chen, Michael"

Designing the ideal transition-metal-oxide-based RRAM stack from first-principles thermodynamics and defect kinetics

Clima, Sergiu; Chen, Yangyin; Fantini, Andrea; Chen, Michael; Goux, Ludovic; Govoreanu, Bogdan; Degraeve, Robin; Jurczak, Gosia; Pourtois, Geoffrey (2015)

Doped Gd-O based RRAM for embedded application

Chen, Michael; Goux, Ludovic; Fantini, Andrea; Redolfi, Augusto; Groeseneken, Guido; Jurczak, Gosia (2016)

Endurance failure mechanisms in TiN\Ta2O5\Ta RRAM stack

Chen, Michael; Goux, Ludovic; Fantini, Andrea; Clima, Sergiu; Degraeve, Robin; Redolfi, Augusto; Chen, Yangyin; Groeseneken, Guido; Jurczak, Gosia (2015)

Engineering of a TiN\Al2O3\(Hf,Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current

Chen, Michael; Goux, Ludovic; Fantini, Andrea; Degraeve, Robin; Redolfi, Augusto; Groeseneken, Guido; Jurczak, Gosia (2015)

First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device

Clima, Sergiu; Chen, Yangyin; Chen, Michael; Goux, Ludovic; Govoreanu, Bogdan; Degraeve, Robin; Fantini, Andrea; Jurczak, Gosia; Pourtois, Geoffrey (2016)

Impact of tungsten oxidation conditions on the performance of Al2O3/WOx-based CBRAM devices

Chen, Zhe; Belmonte, Attilio; Chen, Michael; Radhakrishnan, Janaki; Redolfi, Augusto; Kang, J.; Goux, Ludovic; Kar, Gouri Sankar (2017)

Intrinsic program instability in HfO2 RRAM and consequences on program algorithms

Fantini, Andrea; Gorine, Georgi; Degraeve, Robin; Goux, Ludovic; Chen, Michael; Redolfi, Augusto; Clima, Sergiu; Cabrini, Alessandro; Torelli, Guido; Jurczak, Gosia (2015)

Low-current operation of novel Gd2O3-based RRAM cells with large memory window

Chen, Michael; Goux, Ludovic; Fantini, Andrea; Redolfi, Augusto; Groeseneken, Guido; Jurczak, Gosia (2016-09)

Low-current operation of novel TiN\Gd-Al-O\Hf RRAM cells with large memory window

Chen, Michael; Goux, Ludovic; Fantini, Andrea; Redolfi, Augusto; Groeseneken, Guido; Jurczak, Gosia (2015)

Novel flexible and cost-effective retention assessment method for TMO-based RRAM

Chen, Michael; Fantini, Andrea; Goux, Ludovic; Gorine, Georgi; Redolfi, Augusto; Groeseneken, Guido; Jurczak, Gosia (2016)

Oxygen chemical potential optimization for low current (<10μA) resistive switching in oxide-based RRAM

Chen, Michael; Goux, Ludovic; Fantini, Andrea; Redolfi, Augusto; Groeseneken, Guido; Jurczak, Gosia (2016)

Programming-conditions solutions towards suppression of retention tails of scaled oxide-based RRAM

Chen, Michael; Fantini, Andrea; Goux, Ludovic; Degraeve, Robin; Clima, Sergiu; Redolfi, Augusto; Groeseneken, Guido; Jurczak, Gosia (2015-12)

Quantitative model for post-program instabilities in filamentary RRAM

Degraeve, Robin; Fantini, Andrea; Gorine, G.; Roussel, Philippe; Clima, Sergiu; Chen, Michael; Govoreanu, Bogdan; Goux, Ludovic; Linten, Dimitri; Jurczak, Gosia; Thean, Aaron (2016)

Quantitative retention model for filamentary oxide-based resistive RAM

Degraeve, Robin; Chen, Michael; Celano, Umberto; Fantini, Andrea; Goux, Ludovic; Linten, Dimitri; Kar, Gouri Sankar (2017)

Quantitive endurance failure model for filamentary RRAM

Degraeve, Robin; Fantini, Andrea; Roussel, Philippe; Goux, Ludovic; Costantino, A.; Chen, Michael; Clima, Sergiu; Govoreanu, Bogdan; Linten, Dimitri; Thean, Aaron; Jurczak, Gosia (2015)

Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled hour-glass filament shape in a novel W\WO3\Al2O3\Cu CBRAM

Goux, Ludovic; Belmonte, Attilio; Celano, Umberto; Woo, Jiyong; Folkersma, Steven; Chen, Michael; Redolfi, Augusto; Fantini, Andrea; Degraeve, Robin; Clima, Sergiu; Vandervorst, Wilfried; Jurczak, Gosia (2016)

Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta2O5\Ta RRAM device

Goux, Ludovic; Fantini, Andrea; Redolfi, Augusto; Chen, Michael; Shi, FangFang; Degraeve, Robin; Chen, Yangyin; Witters, Thomas; Groeseneken, Guido; Jurczak, Gosia (2014)