Browsing by author "Vantomme, Andre"
Now showing items 61-80 of 180
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Formation of Ni(Ge1-xSnx) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Nishimura, Tsuyoshi; Nakatsuka, Osamu; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Zaima, Shigeaki (2011) -
Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Nishimura, Tsuyoshi; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osaku; Zaima, Shigeaki (2010) -
Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Nishimura, Tsuyoshi; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osaku; Zaima, Shigeaki (2010) -
Formation of Ni(Ge1-ySny)/Ge1-xSnx/Ge contact for Ge1-xSnx source/drain Stressor
Nishimura, T.; Nakatsuka, O.; Shimura, Y.; Takeuchi, S.; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Zaima, S. (2010) -
Formation of self-organized nanodots on GaN surface by Ar-ion implantation
Som, Tapobrata; Pereira, L.; Skeren, T.; Demeulemeester, J.; Franquet, Alexis; Temst, K.; Vantomme, Andre (2010) -
Formation of self-organized nanodots on GaN surface by Ar-ion implantation
Som, Tapobrata; Pereira, L.; Skeren, T.; Demeulemeester, J.; Franquet, Alexis; Temst, K.; Vantomme, Andre (2010) -
Formation of ultra-thin PtSi layers with a 2-step silicidation process
Donaton, R. A.; Jin, S.; Bender, Hugo; Zagrebnov, Maxim; Baert, Kris; Maex, Karen; Vantomme, Andre; Langouche, G. (1997) -
Fundamental aspects of germanium surface passivation by gas phase oxidation and liquid phase sulfidation
Fleischmann, Claudia; Schouteden, Koen; Houssa, Michel; Sioncke, Sonja; Mueller, Matthias; Van Haesendonck, Chris; Temst, Kristiaan; Vantomme, Andre (2014) -
Ge1-xSnx optical devices: growth and applications
Shimura, Yosuke; Wang, Wei; Vandervorst, Wilfried; Gencarelli, Federica; Gassenq, Alban; Roelkens, Gunther; Vantomme, Andre; Caymax, Matty; Loo, Roger (2014) -
Ge1-xSnx stressors for strained-Ge CMOS
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, T.; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Sakai, A.; Nakatsuka, Osaku; Zaima, Shigeaki (2011) -
Ge1-xSnx stressors for strained-Ge CMOS
Takeuchi, Shotaro; Shimura, Yosuke; Nishimura, Tsuyoshi; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Demeulemeester, Jelle; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2010) -
GeSn technology: impact of Sn on Ge CMOS applications
Zaima, S.; Nakatsuka, O.; Shimura, Y.; Adachi, M.; Nakamura, M.; Takeuchi, S.; Vincent, Benjamin; Gencarelli, Federica; Clarysse, Trudo; Demeulemeester, J.; Temst, K.; Vantomme, Andre; Caymax, Matty; Loo, Roger (2011) -
GeSn Technology: Impact of Sn on Ge CMOS Applications
Zaima, S.; Natasuka, O.; Shimura, Y.; Takeuchi, S.; Vincent, Benjamin; Gencarelli, Federica; Clarysse, Trudo; Demeulemeester, J.; Temst, K.; Vantomme, Andre; Caymax, Matty; Loo, Roger (2011) -
GeSn: future applications and strategy
Loo, Roger; Caymax, Matty; Vincent, Benjamin; Dekoster, Johan; Takeuchi, Shotaro; Nakatsuka, Osamu; Zaima, Shigeaki; Temst, Kristiaan; Vantomme, Andre (2010) -
Grain size and orientation in ternary Co1-xNixSi2 thin films on Si(100): Influence of the Ni content
Smeets, D.; Detavernier, C.; Bender, Hugo; Vantomme, Andre (2004) -
Grain size and orientation in ternary Co1-xNixSi2 thin films on Si(100): influence of the Ni content
Smeets, D.; Vantomme, Andre; Drijbooms, Chris; Bender, Hugo (2004) -
Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2
Satta, Alessandra; Schuhmacher, Jörg; Whelan, Caroline; Vandervorst, Wilfried; Brongersma, Sywert; Beyer, Gerald; Maex, Karen; Vantomme, Andre; Viitanen, M.M.; Brongersma, H.H.; Besling, Wim (2002) -
Growth of high-quality buried Y- and (Y, Nd)-silicide layers prepared by channelled ion implantation
Jin, S.; Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Hogg, S.; Pattyn, H.; Langouche, G. (1998) -
H2S exposure of a (100)Ge surfaces: evidences for a (2x1) electrically passivated surface
Houssa, Michel; Nelis, Daniel; Hellin, David; Pourtois, Geoffrey; Conard, Thierry; Paredis, K.; Vanormelingen, Koen; Vantomme, Andre; Van Bael, Marlies; Mullens, J.; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007) -
Heavily doping technology for strained Ge1-xSnx layers
Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Eneman, Geert; Clarysse, Trudo; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2010)