Browsing by author "Vantomme, Andre"
Now showing items 41-60 of 180
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Elastic strain in In0.18Ga0.82N layer: a combined x-ray diffraction and Rutherford backscattering/channeling study
Wu, Ming Fang; Vantomme, Andre; Hogg, S. M.; Langouche, G.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid (1999) -
Elastic strain in InGaN and AlGaN layers
Wu, Ming Fang; Yao, S.; Vantomme, Andre; Hogg, S.; Langouche, G.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid; Li, J.; Zhang, G. Y. (1999) -
Elastic strain in InGaN and AlGaN layers
Wu, Ming Fang; Vantomme, Andre; Hogg, S.; Langouche, G.; Van der Stricht, Wim; Jacobs, Koen; Moerman, Ingrid; Li, J.; Zhang, G. Y. (2000) -
Elemental redistribution of Pt and Pd in nickel silicides: a comparative study
Schrauwen, A.; Demeulemeester, Jelle; Kumar, Arul; De Schutter, B.; Vandervorst, Wilfried; Detavernier, C.M.; Comrie, C.M.; Temst, Kristiaan; Vantomme, Andre (2012) -
Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution
Lin, Dennis; Brammertz, Guy; Sioncke, Sonja; Fleischmann, Claudia; Delabie, Annelies; Martens, Koen; Bender, Hugo; Conard, Thierry; Tseng, Joshua; Lin, Vic; Wang, Wei-E; Temst, Kristiaan; Vantomme, Andre; Mitard, Jerome; Caymax, Matty; Meuris, Marc; Heyns, Marc; Hoffmann, Thomas Y. (2009) -
Enhancement of ALCVD(TM) TiN growth on Si-O-C and a-SiC:H films by O2-based plasma treatments
Satta, Alessandra; Baklanov, Mikhaïl; Richard, Olivier; Vantomme, Andre; Bender, Hugo; Conard, Thierry; Maex, Karen; Li, W.M.; Elers, K. E.; Haukka, S. (2002) -
Epitaxial GdSi1.7 prepared by ion beam synthesis on (111) silicon
Bender, Hugo; Jin, S.; Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, H. (1996) -
Epitaxial GdSi1.7 prepared by ion beam synthesis on (111) silicon
Bender, Hugo; Jin, S.; Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, H. (1998) -
Epitaxial growth of Gd silicides prepared by channeled ion implantation
Jin, S.; Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, G. (1997) -
EXAFS investigation of Sn local environment in strained and relaxed epitaxial Ge1xSnx films
Gencarelli, Federica; Grandjean, Didier; Shimura, Yosuke; Vincent, Benjamin; Banerjee, Dipanjan; Vantomme, Andre; Vandervorst, Wilfried; Loo, Roger; Heyns, Marc; Temst, Kristiaan (2015) -
EXAFS study of Sn local environment in strained and relaxed CVD grown epitaxial GeSn films
Gencarelli, Federica; Grandjean, Didier; Shimura, Yosuke; Vincent, Benjamin; Vantomme, Andre; Vandervorst, Wilfried; Loo, Roger; Heyns, Marc; Temst, Kristiaan (2013) -
Exchange bias induced by O ion implantation in ferromagnetic thin films
Demeter, J.; Menendez, E.; Schrauwen, A.; Teichert, A.; Steitz, R.; Vandezande, S.; Wildes, A. R.; Vandervorst, Wilfried; Temst, K.; Vantomme, Andre (2012) -
Experimental and theoretical study of Ge surface passivation
Houssa, Michel; Pourtois, Geoffrey; Kaczer, Ben; De Jaeger, Brice; Leys, Frederik; Nelis, Daniel; Paredis, Kristof; Vantomme, Andre; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007) -
Exploring the ALD Al2O3/ In0.53Ga0.47As and Al2O3/Ge interface properties: a common gate stack approach for advanced III-V/Ge CMOS
Lin, Dennis; Waldron, Niamh; Brammertz, Guy; Martens, Koen; Wang, Wei-E; Sioncke, Sonja; Delabie, Annelies; Bender, Hugo; Conard, Thierry; Tseng, W.H.; Lin, S.C.; Temst, K.; Vantomme, Andre; Mitard, Jerome; Caymax, Matty; Meuris, Marc; Heyns, Marc; Hoffmann, Thomas Y. (2010) -
Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1-xSnx films
Gencarelli, Federica; Grandjean, Didier; Shimura, Yosuke; Vincent, Benjamin; Banerjee, Dipanjan; Vantomme, Andre; Vandervorst, Wilfried; Loo, Roger; Heyns, Marc; Temst, Kristiaan (2015) -
Formation and characterization of Ni(Ge1-ySny)/Ge1-xSnx/Ge contacts
Nishimura, Tsuyoshi; Nakatsuka, Osamu; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Zaima, Shigeaki (2010-09) -
Formation and microstructure of cubic metastable iron silicides synthesized during pulsed laser annealing
Falepin, Annelies; Cottenier, S.; Comrie, C.M.; Richard, Olivier; Bender, Hugo; Langouche, G.; Vantomme, Andre (2003) -
Formation and thermal stability of Nd0.32Y0.68Si1.7 layers formed by channeled ion beam synthesis
Wu, Ming Fang; Vantomme, Andre; Hogg, S.; Pattyn, H.; Langouche, G.; Jin, S.; Bender, Hugo (1998) -
Formation of (Nd,Y)-silicides by sequential channeled implantation of Y and Nd ions
Jin, Sing; Bender, Hugo; Wu, Ming Fang; Vantomme, Andre; Langouche, G. (2000) -
Formation of continuous and ultra-thin PtSi layers for infrared detector applications
Donaton, R. A.; Jin, S.; Bender, Hugo; Maex, Karen; Vantomme, Andre; Langouche, G. (1998)