Browsing by author "Vantomme, Andre"
Now showing items 21-40 of 180
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Co silicide formation on SiGeC/Si and SiGe/Si layers
Donaton, R. A.; Maex, Karen; Vantomme, Andre; Langouche, G.; Morciaux, Y.; St. Amour, A.; Sturm, J. C. (1997) -
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
Vantomme, Andre; Wu, Ming Fang; Hogg, S.; Langouche, G.; Jacobs, Koen; Moerman, Ingrid; White, M. E.; O'Donnell, K. P.; Nistor, Leona; Van Landuyt, J.; Bender, Hugo (2000) -
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
Vantomme, Andre; Wu, Ming Fang; Hogg, S.; Langouche, G.; Jacobs, Koen; Moerman, Ingrid; White, M. E.; O'Donnell, K. P.; Nistor, Leona; Van Landuyt, J.; Bender, Hugo (2000) -
Comparison of Co silicidation on SiGe and SiGeC alloys
Donaton, R. A.; Maex, Karen; Vantomme, Andre; St. Amour, A.; Sturm, J. C. (1996) -
Comprehensive Rutherford backscattering and channeling study of ion-beam-synthesized ErSi1.7 layers
Wu, Ming Fang; Vantomme, Andre; De Wachter, Jo; Degroote, S.; Pattyn, Hugo; Langouche, G.; Bender, Hugo (1996) -
Considerations about multiple and plural scattering in heavy-ion low-energy ERDA
Giangrandi, Simone; Arstila, Kai; Brijs, Bert; Sajavaara, T.; Vantomme, Andre; Vandervorst, Wilfried (2009) -
CoSi2 formation from CoxNi1-x/Ti system
Chamirian, Oxana; Lauwers, Anne; Demeurisse, Caroline; Guérault, H.; Vantomme, Andre; Maex, Karen (2002) -
Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Gencarelli, Federica; Vincent, Benjamin; Demeulemeester, Jelle; Vantomme, Andre; Moussa, Alain; Franquet, Alexis; Kumar, Arul; Bender, Hugo; Meersschaut, Johan; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Temst, Kristiaan; Heyns, Marc (2012) -
Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Gencarelli, Federica; Vincent, Benjamin; Kumar, Arul; Demeulemeester, Jelle; Vantomme, Andre; Franquet, Alexis; Meersschaut, Johan; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Temst, Kristiaan; Heyns, Marc (2012) -
Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Gencarelli, Federica; Vincent, Benjamin; Demeulemeester, Jelle; Vantomme, Andre; Moussa, Alain; Franquet, Alexis; Kumar, Arul; Bender, Hugo; Meersschaut, Johan; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Temst, Kristiaan; Heyns, Marc (2013) -
Crystalline quality and phase stability of hexagonal GdSi1.7 layers formed by ion beam synthesis
Wu, Ming Fang; Vantomme, Andre; Pattyn, Hugo; Langouche, G.; Bender, Hugo (1996) -
CVD epitaxial growth of GeSn opens a new route for advanced Sn-based logic and photonics devices
Vincent, Benjamin; Gencarelli, Federica; Kumar, Arul; Vantomme, Andre; Merckling, Clement; Lin, Dennis; Afanasiev, Valeri; Eneman, Geert; Clarysse, Trudo; Firrincieli, Andrea; Vandervorst, Wilfried; Dekoster, Johan; Loo, Roger; Caymax, Matty (2012) -
Depth resolution optimization and role of multiple scattering in low-energy TOF-ERDA
Giangrandi, Simone; Brijs, Bert; Arstila, Kai; Sajavaara, T.; Vantomme, Andre; Vandervorst, Wilfried (2007) -
Depth resolution optimization for low-energy ERDA
Giangrandi, Simone; Arstila, Kai; Brijs, Bert; Sajavaara, T.; Vantomme, Andre; Vandervorst, Wilfried (2007) -
Development of the Ni(001) surface morphology upon low energy Ar+ ion bombardment
Skeren, Tomas; Vandervorst, Wilfried; Vantomme, Andre; Temst, Kristiaan (2009) -
Direct determination of the composition and elastic strain in InGaN and AlGaN layers
Vantomme, Andre; Wu, Ming Fang; Hogg, S.; Langouche, G.; Yao, S.; Jacobs, Koen; Moerman, Ingrid; Li, J.; Zhang, G. Y. (1999) -
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer
Nistor, Leona; Bender, Hugo; Vantomme, Andre; Wu, Ming Fang; Van Landuyt, J.; O'Donnell, K. P.; Martin, R.; Jacobs, Koen; Moerman, Ingrid (2000) -
Dislocation density and tetragonal distortion of a GaN epilayer on Si(111): a comparative RBS/C and TEM study
Lenka, Hara; Meersschaut, Johan; Kandaswamy, Prem Kumar; Modarresi, H.; Bender, Hugo; Vantomme, Andre; Vandervorst, Wilfried (2014) -
Dose dependent phenomena arising from implantation of Er into Si
Hogg, S.M.; Pipeleers, B.; Vantomme, Andre; Bender, Hugo; Richard, Olivier; Swart, M. (2005) -
Effects of growth parameters on the epitaxy of CoSi2//Si(100) formed by reactive deposition epitaxy
Vantomme, Andre; Degroote, S.; Dekoster, J.; Bender, Hugo; Langouche, G. (1996)