Browsing by author "Minj, Albert"
Now showing items 1-20 of 22
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Assessment of N-type and P-type doping in (Al,Ga)N heterostructures by Scanning probe microscopy techniques
Minj, Albert; Zhao, Ming; Bakeroot, Benoit; Paredis, Kristof; Wouters, Lennaert; Hantschel, Thomas; Decoutere, Stefaan (2021) -
Carrier profiling in high vacuum using Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy
Wouters, Lennaert; Minj, Albert; Celano, Umberto; Hantschel, Thomas; Paredis, Kristof; Vandervorst, Wilfried (2020) -
Characterization of defect states in Mg-doped GaN-on-Si p+n diodes using Deep-Level Transient Fourier Spectroscopy
Lechaux, Yoann; Minj, Albert; Mechin, Laurence; Liang, Hu; Geens, Karen; Zhao, Ming; Simoen, Eddy; Guillet, Bruno (2020) -
Conductivity Enhancement in Transition Metal Dichalcogenides: A Complex Water Intercalation and Desorption Mechanism
Serron, Jill; Minj, Albert; Spampinato, Valentina; Franquet, Alexis; Rybalchenko, Yevhenii; Boulon, Marie-Emmanuelle; Brems, Steven; Shi, Yuanyuan; Groven, Benjamin; Villarreal, Renan; Conard, Thierry; van der Heide, Paul; Hantschel, Thomas; Medina Silva, Henry (2023-05-17) -
Contact Interface Characterization of Graphene contacted MoS2 FETs
Koladi Mootheri, Vivek; Minj, Albert; Arutchelvan, Goutham; Leonhardt, Alessandra; Asselberghs, Inge; Heyns, Marc; Radu, Iuliana; Lin, Dennis (2021) -
Correlated Intrinsic Electrical and Chemical Properties of Epitaxial WS2 via Combined C-AFM and ToF-SIMS Characterization
Spampinato, Valentina; Shi, Yuanyuan; Serron, Jill; Minj, Albert; Groven, Benjamin; Hantschel, Thomas; van der Heide, Paul; Franquet, Alexis (2023) -
Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy Techniques
Minj, Albert; Geens, Karen; Liang, Hu; Han, Han; Noel, Celine; Bakeroot, Benoit; Paredis, Kristof; Zhao, Ming; Hantschel, Thomas; Decoutere, Stefaan (2023) -
Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
Filho Goncalez, Walter; Borga, Matteo; Geens, Karen; Cingu, Deepthi; Chatterjee, Urmimala; Banerjee, Sourish; Vohra, Anurag; Han, Han; Minj, Albert; Hahn, Herwig; Marx, Matthias; Fahle, Dirk; Bakeroot, Benoit; Decoutere, Stefaan (2023) -
Electrical characterization and extraction of activation energies of the defect states in the LaAlO3/SrTiO3 heterostructure
Lechaux, Yoann; Chen, Yu; Minj, Albert; Sanchez, Florencio; Herranz, Gervasi; Mechin, Laurence; Guillet, Bruno (2022) -
Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics
Shi, Yuanyuan; Groven, Benjamin; Serron, Jill; Wu, Xiangyu; Nalin Mehta, Ankit; Minj, Albert; Sergeant, Stefanie; Han, Han; Asselberghs, Inge; Lin, Dennis; Brems, Steven; Huyghebaert, Cedric; Morin, Pierre; Radu, Iuliana; Caymax, Matty (2021) -
Epitaxial strain and thickness dependent structural, electrical and magnetic properties of La0.67Sr0.33MnO3 films
Chaluvadi, Sandeep Kumar; Ajejas, Fernando; Orgiani, Pasquale; Lebargy, Sylvain; Minj, Albert; Flament, Stephan; Camerero, Julio; Perna, Paolo; Mechin, Laurence (2020) -
First solar cells on exfoliated silicon foils obtained at room temperature by the slim-cut technique using an epoxy layer
Bellanger, Pierre; Slaoui, Abdelilah; Minj, Albert; Martini, Roberto; Debucquoy, Maarten; Serra, Joao M. (2016) -
Growth evolution of N-polar Indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer
Chauhan, Prerna; Hasenöhrl, Stanislav; Minj, Albert; Chauvat, Marie Pierre; Ruterana, Pierre; Kuzmík, Jan (2020) -
Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells
Minj, Albert; Zhao, Ming; Bakeroot, Benoit; Paredis, Kristof (2021) -
Impact of charge trapping on imprint and its recovery in HfO2 based FeFET
Higashi, Yusuke; Ronchi, Nicolo; Kaczer, Ben; Banerjee, Kaustuv; McMitchell, Sean; O'Sullivan, Barry; Clima, Sergiu; Minj, Albert; Celano, Umberto; Di Piazza, Luca; Suzuki, Masamichi; Linten, Dimitri; Van Houdt, Jan (2019) -
Persistent photocarrier Accumulation and Depletion in LaAlO3/SrTiO3 Quantum Wells
Chen, Yu; Lechaux, Yoann; Casals, Blai; Guillet, Bruno; Minj, Albert; Sanchez, Florencio; Gázquez, Jaume; Mechin, Laurence; Herranz, Gervasi (2021) -
Photoinduced persistent electron accumulation and depletion in LaAlO3/SrTiO3 quantum wells
Chen, Yu; Lechaux, Yoann; Casals, Blai; Guillet, Bruno; Minj, Albert; Gázquez, Jaume; Mechin, Laurence; Herranz, Gervasi (2020) -
Probing the evolution of electrically active defects in doped ferroelectric HfO2 during wake-up and fatigue
Celano, Umberto; Chen, Yi-Hsuan; Minj, Albert; Banerjee, Kaustuv; Ronchi, Nicolo; McMitchell, Sean; Van Marcke, Patricia; Favia, Paola; Wu, T. L.; Kaczer, Ben; Van den Bosch, Geert; Van Houdt, Jan; van der Heide, Paul (2020) -
Scanning tunneling microscopy for imaging and quantification of defects in as-deposited MoS2 monolayers on sapphire substratesâ
Rybalchenko, Yevhenii; Minj, Albert; Medina Silva, Henry; Villarreal, R.; Groven, Benjamin; Lin, Dennis; Pereira, L. M. C.; Morin, Pierre; Hantschel, Thomas; Afanasiev, Valeri (2023) -
Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage
Cavalcoli, Daniela; Minj, Albert; Fazio, Maria; Cros, Ana; Heuken, Michael (2020)