Browsing by author "Scarrozza, Marco"
Now showing items 1-17 of 17
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A first-principles study of the structural and electronic properties of III-V/thermal oxide interfaces
Scarrozza, Marco; Pourtois, Geoffrey; Houssa, Michel; Caymax, Matty; Stesmans, Andre; Meuris, Marc; Heyns, Marc (2009) -
A theoretical study of the initial oxidation of the GaAs(001)-beta2(2x4) surface
Scarrozza, Marco; Pourtois, Geoffrey; Houssa, Michel; Caymax, Matty; Stesmans, Andre; Meuris, Marc; Heyns, Marc (2009) -
Adsorption of molecular oxygen on the reconstructed beta2(2x4)-GaAs(001) surface: a first-principles study
Scarrozza, Marco; Pourtois, Geoffrey; Houssa, Michel; Caymax, Matty; Meuris, Marc; Heyns, Marc; Stesmans, Andre (2009) -
Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
Merckling, Clement; Chang, Y.C.; Lu, C.Y.; Penaud, J.; Brammertz, Guy; Scarrozza, Marco; Pourtois, Geoffrey; Kwo, J.; Hong, M.; Dekoster, Johan; Meuris, Marc; Heyns, Marc; Caymax, Matty (2011) -
First-principles simulations of the oxidation of the GaAs(001)-beta2(2x4) surface
Scarrozza, Marco; Pourtois, Geoffrey; Houssa, Michel; Meuris, Marc; Heyns, Marc (2008) -
Ge and III/V devices for advanced CMOS
Heyns, Marc; Adelmann, Christoph; Brammertz, Guy; Brunco, David; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Wang, Wei-E (2009) -
Ge and III/V devices on Si for advanced CMOS
Heyns, Marc; Bellenger, Florence; Brammertz, Guy; Caymax, Matty; De Gendt, Stefan; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Groeseneken, Guido; Houssa, Michel; Leonelli, Daniele; Lin, Dennis; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Rooyackers, Rita; Scarrozza, Marco; Simoen, Eddy; Van Elshocht, Sven; Vandenberghe, William; Vandooren, Anne; Verhulst, Anne (2009) -
Ge and III/V: the CMOS of the future
Heyns, Marc; Adelmann, Christoph; Bellenger, Florence; Brammertz, Guy; Brunco, David; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Kaczer, Ben; Lin, Dennis; Martens, Koen; Meuris, Marc; Mitard, Jerome; Opsomer, Karl; Pourtois, Geoffrey; Satta, Alessandra; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Souriau, Laurent; Terzieva, Valentina; Van Elshocht, Sven (2007) -
High mobility channel materials and novel devices for scaling of nanoelectronics beyond the Si roadmap
Heyns, Marc; Bellenger, Florence; Brammertz, Guy; Caymax, Matty; De Gendt, Stefan; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Groeseneken, Guido; Houssa, Michel; Leonelli, Daniele; Lin, Dennis; Martens, Koen; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Van Elshocht, Sven; Vandenberghe, William; Vandooren, Anne; Verhulst, Anne; Wang, Wei-E (2009) -
High-k dielectrics and interface passivation for Ge and III/V devices on silicon for advanced CMOS
Heyns, Marc; Bellenger, Florence; Brammertz, Guy; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Van Elshocht, Sven; Wang, Wei-E (2009) -
High-k dielectrics and interface passivation for Ge and III/V devices on silicon for advanced CMOS
Heyns, Marc; Adelmann, Christoph; Brammertz, Guy; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Lin, Dennis; Martens, Koen; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Wang, Wei-E (2009) -
Interfaces of high-k dielectrics on GaAs: their common features and the relationship with Fermi level pinning
Caymax, Matty; Brammertz, Guy; Delabie, Annelies; Sioncke, Sonja; Lin, Dennis; Scarrozza, Marco; Pourtois, Geoffrey; Wang, Wei-E; Meuris, Marc; Heyns, Marc (2009) -
Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures
Merckling, Clement; Penaud, Julien; Bellenger, Florence; Kohen, David; Brammertz, Guy; Alian, AliReza; Pourtois, Geoffrey; Scarrozza, Marco; Houssa, Michel; El-Kazzi, Mario; Dekoster, Johan; Caymax, Matty; Meuris, Marc; Heyns, Marc (2009) -
Oxidation of the GaAs(001) surface: Insights from first-principles calculations
Scarrozza, Marco; Pourtois, Geoffrey; Houssa, Michel; Heyns, Marc; Stesmans, Andre (2012) -
Scaling of nanoelectronics beyond the Si roadmap
Heyns, Marc; Bellenger, Florence; Brammertz, Guy; Cantoro, Mirco; Caymax, Matty; De Gendt, Stefan; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Groeseneken, Guido; Houssa, Michel; Iacopi, Francesca; Leonelli, Daniele; Lin, Dennis; Magnus, Wim; Martens, Koen; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Soree, Bart; Van Elshocht, Sven; Vandenberghe, William; Vandooren, Anne; Verhulst, Anne; Wang, Wei-E (2009) -
Shaping the future of nanoelectronics beyond the Si roadmap with new materials and devices
Heyns, Marc; Bellenger, Florence; Brammertz, Guy; Caymax, Matty; Cantoro, Mirco; De Gendt, Stefan; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Groeseneken, Guido; Hellings, Geert; Houssa, Michel; Iacopi, Francesca; Leonelli, Daniele; Lin, Dennis; Magnus, Wim; Martens, Koen; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Penaud, Julien; Pourtois, Geoffrey; Scarrozza, Marco; Simoen, Eddy; Soree, Bart; Van Elshocht, Sven; Vandenberghe, William; Vandooren, Anne; Vereecken, Philippe; Verhulst, Anne; Wang, Wei-E (2010) -
Universal stress-defect correlation at (100)semiconductor/oxide interfaces
Houssa, Michel; Scarrozza, Marco; Pourtois, Geoffrey; Afanas'ev, Valery; Stesmans, Andre (2011)