Browsing by author "Wang, Wenfei"
Now showing items 1-14 of 14
-
AlGaN/GaN HEMT : when MOVPE meets the device challenge
Germain, Marianne; Leys, Maarten; Boeykens, Steven; Cheng, Kai; Degroote, Stefan; Derluyn, Joff; Das, Johan; Vandersmissen, Raf; Wang, Wenfei; Xiao, Dongping; Borghs, Gustaaf (2005) -
ATHENA, Epi-GaN and beyond :MOVPE growth and processing of AlGaN/GaN HEMT
Germain, Marianne; Leys, Maarten; Degroote, Stefan; Cheng, Kai; Boeykens, Steven; Derluyn, Joff; Das, Johan; Ruythooren, Wouter; Vandersmissen, Raf; Schreurs, Dominique; Wang, Wenfei; Xiao, Dongping; Borghs, Gustaaf (2005) -
Comparison of the effect of gate dielectric layer on 2DEG carrier concentration in strained AlGaN/GaN heterostructure
Wang, Wenfei; Derluyn, Joff; Germain, Marianne; De Wolf, Ingrid; Leys, Maarten; Boeykens, Steven; Degroote, Stefan; Ruythooren, Wouter; Das, Johan; Schreurs, Dominique; Nauwelaers, Bart; Borghs, Gustaaf (2005) -
Determining weak Fermi-level pinning in MOS devices by coductance and capacitance analysis and application to GaAs MOS devices
Martens, Koen; Wang, Wenfei; dimoulas, A.; Borghs, Gustaaf; Meuris, Marc; Groeseneken, Guido; Maes, Herman (2007) -
Effect of metal work functions on barrier heights of Schottky contacts and two-dimensional electron gas in strained AlGaN/GaN heterostructures
Wang, Wenfei; Zimmermann, L.; Derluyn, Joff; Germain, Marianne; Schreurs, Dominique; Borghs, Gustaaf (2004) -
GaN based high electron mobility transistor technology and physics
Wang, Wenfei (2007-05) -
GaN MISFETs using organic gaate dielectrics
Wang, Wenfei; Steudel, Soeren; Cheng, Kai; Borghs, Gustaaf (2007) -
High electron mobility in AlGaN/GaN HEMT grown on sapphire: strain modification by means of AlN interlayers
Germain, Marianne; Leys, Maarten; Boeykens, Steven; Degroote, Stefan; Wang, Wenfei; Schreurs, Dominique; Ruythooren, Wouter; Choi, Kang-Hoon; Van Daele, B.; Van Tendeloo, G.; Borghs, Gustaaf (2004-12) -
High performance GaN field-effect-transistors grown by MOVPE with in-situ Si3N4 surface passivation
Germain, Marianne; Derluyn, Joff; Xiao, Dongping; Vandersmissen, Raf; Das, Johan; Wang, Wenfei; Boeykens, Steven; Leys, Maarten; Degroote, Stefan; Ruythooren, Wouter; Borghs, Gustaaf (2004) -
Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristics
Martens, Koen; Wang, Wenfei; De Keersmaecker, Koen; Borghs, Gustaaf; Groeseneken, Guido; Maes, Herman (2007) -
In situ-grown ultra-thin Si3N4 passivation and gate dielectric layers for AlGaN/GaN insulating gate HFET
Wang, Wenfei; Derluyn, Joff; Leys, Maarten; Germain, Marianne; Schreurs, Dominique; Borghs, Gustaaf (2005) -
Influence of surface states on current slump and degradation in AlGaN/GaN HEMTs
Wang, Wenfei; Derluyn, Joff; Steudel, Soeren; Schreurs, Dominique; Borghs, Gustaaf (2005) -
MOVPE AlGaN/AlN/GaN HEMT with in-situ passivation
Germain, Marianne; Ruythooren, Wouter; Leys, Maarten; Derluyn, Joff; Das, Johan; Xiao, Dongping; Wang, Wenfei; Vandersmissen, Raf; Degroote, Stefan; Boeykens, Steven; Schreurs, Dominique; Borghs, Gustaaf (2004-10) -
Surface stabilization for higher performance AlGaN/GaN HEMT with in-situ MOVPE SiN
Germain, Marianne; Leys, Maarten; Derluyn, Joff; Boeykens, Steven; Degroote, Stefan; Ruythooren, Wouter; Das, Johan; Vandersmissen, Raf; Xiao, Dongping; Wang, Wenfei; Borghs, Gustaaf (2005)