Browsing by author "Vandelli, Luca"
Now showing items 1-6 of 6
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A comprehensive understanding of the erase of TANOS memories through charge separation experiments and simulations
Padovani, Andrea; Arreghini, Antonio; Vandelli, Luca; Larcher, Luca; Van den Bosch, Geert; Pavan, Paolo; Van Houdt, Jan (2011) -
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability
Padovani, Andrea; Arreghini, Antonio; Vandelli, Luca; Larcher, Luca; Van den Bosch, Geert; Van Houdt, Jan (2012) -
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories
Suhane, Amit; Arreghini, Antonio; Van den Bosch, Geert; Vandelli, Luca; Padovani, Andrea; Breuil, Laurent; Larcher, Luca; De Meyer, Kristin; Van Houdt, Jan (2010) -
Role of holes and electrons during erase of TANOS memories: evidence for dipole formation and its impact on reliability
Vandelli, Luca; Arreghini, Antonio; Padovani, Andrea; Larcher, Luca; Van den Bosch, Geert; Della Marca, Vincenzo; Pavan, Paolo; Jurczak, Gosia; Van Houdt, Jan (2010) -
SrTiO3 for sub-20 nm DRAM technology nodes – characterization and modeling
Kaczer, Ben; Larcher, Luca; Vandelli, Luca; Resinger, Hans; Popovici, Mihaela Ioana; Clima, Sergiu; Ji, Zhigang; Joshi, Saumya; Swerts, Johan; Redolfi, Augusto; Afanasiev, Valeri; Jurczak, Gosia (2014) -
SrTiOx for sub-20 nm DRAM technology nodes - characterization and modeling
Kaczer, Ben; Larcher, Luca; Vandelli, Luca; Reisinger, Hans; Popovici, Mihaela Ioana; Clima, Sergiu; Ji, Zhigang; Joshi, Saumya; Swerts, Johan; Redolfi, Augusto; Afanasiev, Valeri; Jurczak, Gosia (2015)