Browsing by author "Rittersma, Chris"
Now showing items 1-11 of 11
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A practical baseline process for advanced CMOS devices research
Ponomarev, Youri; Loo, Josine; Rittersma, Chris; Lander, Rob; Hooker, Jacob; Doornbos, Gerben; Surdeanu, Radu; Cubaynes, Florence; Dachs, Charles; Kubicek, Stefan; Henson, Kirklen; Lindsay, Richard (2003) -
Characterization of thermal and electrical stability of MOCVD HfO2-HfSiO4 dielectric layers with polysilicon electrodes for advanced CMOS technologies
Rittersma, Chris; Loo, Josine; Ponomarev, Youri; Verheijen, M.A.; Kaiser, M.; Roozeboom, F.; Van Elshocht, Sven; Caymax, Matty (2004) -
Electrical and physical characterization of MOSFETs with MBE grown La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Conard, Thierry; Pantisano, Luigi; Claes, Martine; Demand, Marc; Deweerd, Wim; De Gendt, Stefan; Houssa, Michel; Lujan, Guilherme; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Hooker, Jacob; Rittersma, Chris; Fompeyrinne, J.; Loquet, J.P. (2005) -
Electrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applications
Date, Lucien; Rittersma, Chris; Massoubre, D.; Ponomarev, Youri; Roozeboom, F.; Pique, Didier; Van Autryve, Luc; Van Elshocht, Sven; Caymax, Matty (2003) -
In-line electrical metrology for high-k gate dielectrics deposited by atomic layer chemical vapour deposition
De Witte, Hilde; Maes, Jan; Passefort, S.; Besling, W.; Eason, K.; Young, E.; Rittersma, Chris; Heyns, Marc (2002-09) -
In-line electrical metrology for high-k gate dielectrics deposited by atomic layer CVD
De Witte, Hilde; Passefort, Sophie; Besling, Wim; Maes, Jan; Eason, K.; Young, Edward; Rittersma, Chris; Heyns, Marc (2003) -
Integration issues of polysilicon with high k dielectrics deposited by Atomic Layer Chemical Vapor Deposition
Tsai, Wilman; Chen, Jian; Carter, Richard; Cartier, Eduard; Kluth, Jon; Richard, Olivier; Claes, Martine; Lin, Steven; Nohira, Hiroshi; Conard, Thierry; Caymax, Matty; Young, Edward; Vandervorst, Wilfried; De Gendt, Stefan; Heyns, Marc; Manabe, Yukiko; Maes, Jan; Rittersma, Chris; Besling, Wim; Roozeboom, F. (2002) -
Materials and electrical characterization of metal gate electrodes on high-k dielectrics for advanced CMOS technologies
Hooker, Jacob; Lander, Rob; Rittersma, Chris; Schram, Tom; Lujan, Guilherme; van Zijl, Jeroen; van den Heuvel, Eric; Roozeboom, Fred (2002) -
Mixed-signal and noise properties of nMOSFETs with HfSiON/TaN gate stacks
Rittersma, Chris; Simoen, Eddy; Srinivasan, Purushothaman; Vertregt, M.; Claeys, Cor (2005) -
Molecular beam epitaxy for advanced gate stack materials and processes
Locquet, Jean-Pierre; Marchiori, Chiara; Sousa, M.; Siegwart, H.; Caimi, D.; Fompeyrine, Jean; Pantisano, Luigi; Claes, Martine; Conard, Thierry; Demand, Marc; Deweerd, Wim; De Gendt, Stefan; Heyns, Marc; Houssa, Michel; Aoulaiche, Marc; Lujan, Guilherme; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Hooker, Jacob; Rittersma, Chris; Furukawa, Yukiko; Seo, J.W.; dimoulas, A. (2005) -
MOSFET with La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Pantisano, Luigi; Conard, Thierry; Claes, Martine; Demand, Marc; Deweerd, Wim; De Gendt, Stefan; Heyns, Marc; Houssa, Michel; Aoulaiche, Marc; Lujan, Guilherme; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Hooker, Jacob; Rittersma, Chris; Fompereyne, Jean; Locquet, Jean-Pierre; dimoulas, A. (2005)