Browsing by author "Blomme, Pieter"
Now showing items 1-20 of 78
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A figure of merit for flash memory multi-leyer tunnel dielectrics
Govoreanu, Bogdan; Blomme, Pieter; Rosmeulen, Maarten; Van Houdt, Jan; De Meyer, Kristin (2001) -
A fully planar stacked gate flash technology with T-shaped floating gate for increased cell coupling ratio
De Vos, Joeri; Haspeslagh, Luc; Blomme, Pieter; Demand, Marc; Devriendt, Katia; Vleugels, Frank; Wellekens, Dirk; Van Houdt, Jan (2007) -
A model for tunneling current in multi-layer tunnel dielectrics
Govoreanu, Bogdan; Blomme, Pieter; Rosmeulen, Maarten; Van Houdt, Jan; De Meyer, Kristin (2003) -
A new scalable self-aligned dual-bit split-gate charge trapping memory device
Breuil, Laurent; Haspeslagh, Luc; Blomme, Pieter; Wellekens, Dirk; De Vos, Joeri; Lorenzini, Martino; Van Houdt, Jan (2005) -
A novel low voltage memory device with an engineered SiO2/high-k tunneling barrier
Blomme, Pieter; Govoreanu, Bogdan; Van Houdt, Jan; De Meyer, Kristin (2003) -
A novel multilayer inter-gate dielectric enabling up To 18V program / erase window for planar NAND flash
Breuil, Laurent; Lisoni, Judit; Blomme, Pieter; Van den Bosch, Geert; Van Houdt, Jan (2013-05) -
A proper approach to characterize retention-after-cycling in 3D-Flash devices
Qiao, Fengying; Arreghini, Antonio; Blomme, Pieter; Van den Bosch, Geert; Pan, Liyang; Xu, Jun; Van Houdt, Jan (2013) -
An effective model for analysing tunneling gate leakage currents through ultrathin oxides and high-k gate stacks from Si inversion layers
Govoreanu, Bogdan; Blomme, Pieter; Henson, Kirklen; Van Houdt, Jan; De Meyer, Kristin (2004) -
An investigation of the electron tunneling leakage current through ultrathin oxides/high-k gate stacks at inversion conditions
Govoreanu, Bogdan; Blomme, Pieter; Henson, Kirklen; Van Houdt, Jan; De Meyer, Kristin (2003) -
An ultra-thin hybrid floating gate concept for sub-20nm NAND flash technologies
Wellekens, Dirk; Blomme, Pieter; Rosmeulen, Maarten; Schram, Tom; Cacciato, Antonio; Van Aerde, Steven; Debusschere, Ingrid; Van Houdt, Jan (2011) -
Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling
Lee, Ko-Hui; Degraeve, Robin; Toledano Luque, Maria; Arreghini, Antonio; Breuil, Laurent; Blomme, Pieter; Van den Bosch, Geert; Van Houdt, Jan (2015) -
Bridging lithography processes with NAND flash ECC complexity
Poliakov, Pavel; Blomme, Pieter; Vaglio Pret, Alessandro; Miranda Corbalan, Miguel; Van Houdt, Jan; Dehaene, Wim (2011-06) -
Comparative reliability investigation of different nitride based local charge trapping memory devices
Breuil, Laurent; Haspeslagh, Luc; Blomme, Pieter; Lorenzini, Martino; Wellekens, Dirk; De Vos, Joeri; Van Houdt, Jan (2005) -
Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughness
Poliakov, Pavel; Blomme, Pieter; Miranda Corbalan, Miguel; Van Houdt, Jan; Dehaene, Wim (2011-05) -
Defects characterization of hybrid floating gate/ inter-gate dielectric interface in flash memory
Zahid, Mohammed; Degraeve, Robin; Tang, Baojun; Lisoni, Judit; Van den Bosch, Geert; Van Houdt, Jan; Breuil, Laurent; Blomme, Pieter; Arreghini, Antonio (2014) -
Effect of interface states on 1T-FBRAM cell retention
Aoulaiche, Marc; Collaert, Nadine; Blomme, Pieter; Simoen, Eddy; Altimime, Laith; Groeseneken, Guido; Jurczak, Gosia; Mendes Almeida, Luciano; Caillat, Christian; Mahatme, N.N. (2012) -
Endurance of one transistor floating body RAM on UTBOX SOI
Aoulaiche, Marc; Bravaix, Alain; Simoen, Eddy; Caillat, Christian; Cho, Moon Ju; Witters, Liesbeth; Blomme, Pieter; Fazan, Pierre; Groeseneken, Guido; Jurczak, Gosia (2014) -
Enhanced tunneling current effect for nonvolatile memory applications
Govoreanu, Bogdan; Blomme, Pieter; Van Houdt, Jan; De Meyer, Kristin (2002) -
Enhanced tunneling current effect for nonvolatile memory applications
Govoreanu, Bogdan; Blomme, Pieter; Van Houdt, Jan; De Meyer, Kristin (2003-04)