Browsing by author "Higuchi, Yuichi"
Now showing items 1-11 of 11
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Effective work function engineering for aggressively scaled planar and FinFET-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Y.; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2012-09) -
Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology
Veloso, Anabela; Chew, Soon Aik; Higuchi, Yuichi; Ragnarsson, Lars-Ake; Simoen, Eddy; Schram, Tom; Witters, Thomas; Van Ammel, Annemie; Dekkers, Harold; Tielens, Hilde; Devriendt, Katia; Heylen, Nancy; Sebaai, Farid; Brus, Stephan; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; Chen, M. S.; Lu, X.; Ganguli, S.; Lei, Yu; Tang, W.; Fu, X.; Gandikota, S.; Noori, A.; Brand, A.; Yoshida, N.; Thean, Aaron; Horiguchi, Naoto (2013) -
Gate-last vs. gate-first technology for aggressively scaled EOT Logic/RF CMOS
Veloso, Anabela; Ragnarsson, Lars-Ake; Cho, Moon Ju; Devriendt, Katia; Kellens, Kristof; Sebaai, Farid; Suhard, Samuel; Brus, Stephan; Crabbe, Yvo; Schram, Tom; Rohr, Erika; Paraschiv, Vasile; Eneman, Geert; Kauerauf, Thomas; Dehan, Morin; Hong, Sug-Hun; Yamaguchi, Shinpei; Takeoka, Shinji; Higuchi, Yuichi; Tielens, Hilde; Van Ammel, Annemie; Favia, Paola; Bender, Hugo; Franquet, Alexis; Conard, Thierry; Li, X.; Pey, K.-L.; Struyf, Herbert; Mertens, Paul; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011) -
Highly scalable effective work function engineering approach for multi-VT modulation of planar and FinFET-based RMG high-k last devies for (sub-)22nm nodes
Veloso, Anabela; Boccardi, Guillaume; Ragnarsson, Lars-Ake; Higuchi, Yuichi; Lee, Jae Won; Simoen, Eddy; Roussel, Philippe; Cho, Moon Ju; Chew, Soon Aik; Schram, Tom; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Brus, Stephan; Dangol, Anish; Paraschiv, Vasile; Vecchio, Emma; Shi, Xiaoping; Sebaai, Farid; Kellens, Kristof; Heylen, Nancy; Devriendt, Katia; Richard, Olivier; Bender, Hugo; Chiarella, Thomas; Arimura, Hiroaki; Thean, Aaron; Horiguchi, Naoto (2013) -
Implementing cubic-phase HfO2 with $j-value ~ 30 in low-VT replacementgate pMOS devices for improved EOT-Scaling and reliability
Ragnarsson, Lars-Ake; Adelmann, Christoph; Higuchi, Yuichi; Opsomer, Karl; Veloso, Anabela; Chew, Soon Aik; Rohr, Erica; Vecchio, Emma; Shi, Xiaoping; Devriendt, Katia; Sebaai, Farid; Kauerauf, Thomas; Pawlak, Malgorzata; Schram, Tom; Van Elshocht, Sven; Horiguchi, Naoto; Thean, Aaron (2012) -
Negative Bias Temperature Instability (NBTI) in p-FinFETs with 45-degree substrate rotation
Cho, Moon Ju; Ritzenthaler, Romain; Krom, Raymond; Higuchi, Yuichi; Kaczer, Ben; Chiarella, Thomas; Boccardi, Guillaume; Togo, Mitsuhiro; Horiguchi, Naoto; Kauerauf, Thomas; Groeseneken, Guido (2013) -
On the oxide trap density and profiles of 1-nm EOT metal-gate last CMOS transistors assessed by low-frequency noise
Simoen, Eddy; Veloso, Anabela; Higuchi, Yuichi; Horiguchi, Naoto; Claeys, Cor (2013) -
Process control & integration options of RMG Technology for aggressively scaled devices
Veloso, Anabela; Higuchi, Yuichi; Chew, Soon Aik; Devriendt, Katia; Ragnarsson, Lars-Ake; Sebaai, Farid; Schram, Tom; Brus, Stephan; Vecchio, Emma; Kellens, Kristof; Rohr, Erika; Eneman, Geert; Simoen, Eddy; Cho, Moon Ju; Paraschiv, Vasile; Crabbe, Yvo; Shi, Xiaoping; Tielens, Hilde; Van Ammel, Annemie; Dekkers, Harold; Favia, Paola; Geypen, Jef; Bender, Hugo; Phatak, Anup; del Agua Borniquel, Jose Ignacio; Xu, K.; Allen, M.; Liu, C.; Xu, T.; Yoo, W.S.; Thean, Aaron; Horiguchi, Naoto (2012) -
Thermal and SF6-plasma treatments for improved (sub-)1nm EOT planar and FinFET-based RMG high-k last devices and enabling a simplified scalable CMOS integration scheme
Veloso, Anabela; Boccardi, Guillaume; Ragnarsson, Lars-Ake; Higuchi, Yuichi; Arimura, Hiroaki; Lee, Jae Woo; Simoen, Eddy; Cho, Moon Ju; Roussel, Philippe; Paraschiv, Vasile; Shi, Xiaoping; Schram, Tom; Chew, Soon Aik; Brus, Stephan; Dangol, Anish; Vecchio, Emma; Sebaai, Farid; Kellens, Kristof; Heylen, Nancy; Devriendt, Katia; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Conard, Thierry; Vaesen, Inge; Richard, Olivier; Bender, Hugo; Athimulam, Raja; Chiarella, Thomas; Thean, Aaron; Horiguchi, Naoto (2013) -
W versus Co–Al as gate fill-metal for aggressively scaled replacement high-k/metal gate devices for (Sub-)22nm technology nodes
Veloso, Anabela; Chew, Soon Aik; Schram, Tom; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Tielens, Hilde; Heylen, Nancy; Devriendt, Katia; Sebaai, Farid; Brus, Stephan; Ragnarsson, Lars-Ake; Pantisano, Luigi; Eneman, Geert; Carbonell, Laure; Richard, Olivier; Favia, Paola; Geypen, Jef; Bender, Hugo; Higuchi, Yuichi; Phatak, Anup; Thean, Aaron; Horiguchi, Naoto (2013) -
W vs. Co-Al as gate fill-metal for aggressively scaled replacement high-k/metal gate devices for (Sub-)22nm technology nodes
Veloso, Anabela; Chew, Soon Aik; Schram, Tom; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Tielens, Hilde; Heylen, Nancy; Devriendt, Katia; Sebaai, Farid; Brus, Stephan; Ragnarsson, Lars-Ake; Pantisano, Luigi; Eneman, Geert; Carbonell, Laure; Richard, Olivier; Favia, Paola; Geypen, Jef; Bender, Hugo; Higuchi, Yuichi; Phatak, Anup; Thean, Aaron; Horiguchi, Naoto (2012-09)