Browsing by author "Yang, H."
Now showing items 1-10 of 10
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An investigation of field reduction effect on NBTI parameter characterization and lifetime prediction using a constant field stress method
Zhou, L.; Bo, T.; Ji, Z.; Yang, H.; Xu, H.; Liu, Q.; Simoen, Eddy; Wang, X.; Ma, X.; Li, Y.; Yin, H.; Du, A.; Zhao, C.; Wang, W. (2020) -
Full spectral analysis of line edge roughness
Leunissen, Peter; Lorusso, Gian; Ercken, Monique; Croon, Jeroen; Yang, H.; Azordegan, A.; DiBiase, Tony (2005) -
Impact of LER and CDU on device performance
Leunissen, Peter; Lorusso, Gian; Ercken, Monique; Croon, Jeroen; Jurczak, Gosia; Zhang, Wenqi; Wu, W.; Yang, H.; Azordegan, A.; DiBiase, T. (2005) -
Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process
Kang, JinFeng; Yu, HongYu; Ren, C.; Wang, X.P.; Li, M.F.; Chan, D.S.H.; Yeo, Y.C.; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.L. (2005-04) -
Insights into the effect of TiN thickness scaling on DC and AC NBTI characteristics in replacement metal gate pMOSFETs
Zhou, L.; Liu, Q.; Yang, H.; Ji, Z.; Xu, H.; Tang, B.; Simoen, Eddy; Jiang, H.; Luo, Y.; Wang, X.; Ma, X.; Li, Y.; Luo, J.; Yin, H.; Zhao, C.; Wang, W. (2020) -
Mechanism of positive-bias temperature instability in sub-1 nm TaN/HfN/HfO2 gate stack with low preexisting traps
Sa, N.; Kang, J.F.; Yang, H.; Liu, X.Y.; He, Y.D.; Han, R.Q.; Ren, C.; Yu, HongYu; Chan, D.S.H.; Kwong, D.-L. (2005-09) -
On-line spectral analysis of line edge roughness: algorithms qualification and transfer to etch
Leunissen, Peter; Lorusso, Gian; DiBiase, Tony; Yang, H.; Azordegan, A. (2005) -
Scalability and reliability of TaN/HfN/HfO2 gate stack fabricated by a high temperature process
Kang, JinFeng; Yu, HongYu; Ren, C.; Yang, H.; Sa, N.; Liu, X.Y.; Han, R.Q.; Li, M.F.; Chan, D.S.H.; Kwong, D.L. (2005) -
The 2021 Magnonics Roadmap
Barman, Anjan; Gubbiotti, Gianluca; Ladak, S.; Adeyeye, A. O.; Krawczyk, M.; Grafe, J.; Adelmann, Christoph; Cotofana, S.; Naeemi, A.; Vasyuchka, V., I; Hillebrands, B.; Nikitov, S. A.; Yu, H.; Grundler, D.; Sadovnikov, A., V; Grachev, A. A.; Sheshukova, S. E.; Duquesne, J-Y; Marangolo, M.; Csaba, G.; Porod, W.; Demidov, V. E.; Urazhdin, S.; Demokritov, S. O.; Albisetti, E.; Petti, D.; Bertacco, R.; Schultheiss, H.; Kruglyak, V. V.; Poimanov, V. D.; Sahoo, S.; Sinha, J.; Yang, H.; Munzenburg, M.; Moriyama, T.; Mizukami, S.; Landeros, P.; Gallardo, R. A.; Carlotti, G.; Kim, J-, V; Stamps, R. L.; Camley, R. E.; Rana, B.; Otani, Y.; Yu, W.; Yu, T.; Bauer, G. E. W.; Back, C.; Uhrig, G. S.; Dobrovolskiy, O., V; Budinska, B.; Qin, H.; van Dijken, S.; Chumak, A., V; Khitun, A.; Nikonov, D. E.; Young, I. A.; Zingsem, B. W.; Winklhofer, M. (2021) -
Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs
Zhou, L.; Zhang, Q.; Yang, H.; Ji, Z.; Zhang, Z.; Liu, Q.; Xu, H.; Tang, B.; Simoen, Eddy; Ma, X.; Wang, X.; Li, Y.; Yin, H.; Luo, J.; Zhao, C.; Wang, W. (2020)