Browsing by author "Goes, Wolfgang"
Now showing items 1-20 of 31
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A comprehensive model for correlated drain and gate current fluctuations
Goes, Wolfgang; Toledano Luque, Maria; Baumgartner, O.; Schanovsky, Frank; Kaczer, Ben; Grasser, Tibor (2013) -
A model for switching traps in amorphous oxides
Goes, Wolfgang; Grasser, Tibor; Karner, Markus; Kaczer, Ben (2009) -
A two-stage model for negative bias temperature instability
Grasser, Tibor; Kaczer, Ben; Goes, Wolfgang; Aichinger, Thomas; Hehenberger, Philipp; Nelhiebel, M. (2009-04) -
Advanced modeling of oxide defects for random telegraph noise
Goes, Wolfgang; Schanovsky, Franz; Grasser, Tibor; Reisinger, Hans; Kaczer, Ben (2011-06) -
An energy-level perspective of bias temperature instability
Grasser, Tibor; Kaczer, Ben; Goes, Wolfgang (2008-04) -
Analytical solution of the switching trap model for negative bias temperature stress
Bindu, B.; Goes, Wolfgang; Kaczer, Ben; Grasser, Tibor (2009) -
Bistable defects as the cause for NBTI and RTN
Goes, Wolfgang; Schanovsky, Franz; Reisinger, Hans; Kaczer, Ben; Grasser, Tibor (2011-08) -
Characterization and modeling of reliability issues in nanoscale devices
Rzepa, Gerhard; Goes, Wolfgang; Kaczer, Ben; Grasser, Tibor (2015) -
Complete extraction of defect bands responsible for instabilities in n and pFinFETs
Rzepa, Gerhard; Waltl, Michael; Goes, Wolfgang; Kaczer, Ben; Franco, Jacopo; Chiarella, Thomas; Horiguchi, Naoto; Grasser, Tibor (2016) -
Dispersive transport and negative bias temperature instability: boundary conditions, initial conditions, and transport models
Grasser, Tibor; Goes, Wolfgang; Kaczer, Ben (2008) -
Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique
Hehenberger, Philipp; Aichinger, Thomas; Grasser, Tibor; Goes, Wolfgang; Triebl, O.; Kaczer, Ben; Nelhiebel, M. (2009-04) -
Efficient Modeling of Charge Trapping a Cryogenic Temperatures-Part II: Experimental
Michl, Jakob; Grill, Alexander; Waldhoer, Dominic; Goes, Wolfgang; Kaczer, Ben; Linten, Dimitri; Parvais, Bertrand; Govoreanu, Bogdan; Radu, Iuliana; Grasser, Tibor; Waltl, Michael (2021) -
Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory
Michl, Jakob; Grill, Alexander; Waldhoer, Dominic; Goes, Wolfgang; Kaczer, Ben; Linten, Dimitri; Parvais, Bertrand; Govoreanu, Bogdan; Radu, Iuliana; Waltl, Michael; Grasser, Tibor (2021) -
Gate current random telegraph noise and single defect conduction
Kaczer, Ben; Toledano Luque, Maria; Goes, Wolfgang; Grasser, Tibor; Groeseneken, Guido (2013) -
Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: from single defects to lifetimes
Grasser, Tibor; Waltl, Michael; Wimmer, Yannick; Goes, Wolfgang; Kosik, R.; Rzepa, Gerhard; Resinger, Hans; Pobegen, Gregor; El-Sayed, A.; Shluger, A.; Kaczer, Ben (2015) -
Microscopic oxide defects causing BTI, RTN, and SILC on high-K FinFETs
Rzepa, Gerhard; Waltl, Michael; Goes, Wolfgang; Kaczer, Ben; Grasser, Tibor (2015) -
Modeling bias temperature instability during stress and recovery
Grasser, Tibor; Goes, Wolfgang; Kaczer, Ben (2008-09) -
Multiphonon processes as the origin of reliability issues
Goes, Wolfgang; Toledano Luque, Maria; Schanovsky, F.; Bina, M.; Baumgartner, O.; Kaczer, Ben; Grasser, Tibor (2013) -
Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs
Waltl, Michael; Grill, Alexander; Rzepa, Gerhard; Goes, Wolfgang; Franco, Jacopo; Kaczer, Ben; Mitard, Jerome; Grasser, Tibor (2016) -
On the volatility of oxide defects: activation, deactivation, and transformation
Grasser, Tibor; Waltl, Michael; Goes, Wolfgang; Wimmer, Yanick; El-Sayed, A.-M.; Shluger, A.; Kaczer, Ben (2015)