Browsing by author "Flandre, D."
Now showing items 1-15 of 15
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Edge effects and tilt dependency of heavy ion SEE characterization in pn junctions
Berger, G.; Moreno, L.; Martinez, I.; Akheyar, Amal; Harboe-Sorensen, R.; Ryckewaert, G.; Flandre, D. (2002) -
FinFET analogue characterization from DC to 110 GHz
Lederer, Dimitri; Kilchytska, V.; Rudenko, T.; Collaert, Nadine; Flandre, D.; Dixit, Abhisek; De Meyer, Kristin; Raskin, J.P. (2005) -
Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs
Kilchytska, V.; Alvarado, J.; Collaert, Nadine; Rooyackers, Rita; Put, Sofie; Simoen, Eddy; Claeys, Cor; Flandre, D. (2011) -
High-energy neutrons effect on strained and non-strained SO MuGFETs and planar MOSFETs
Kilchytska, V.; Alvarado, J.; Put, Sofie; Collaert, Nadine; Simoen, Eddy; Claeys, Cor; Militaru, O.; Berger, G.; Flandre, D. (2012) -
In-depth investigation of 0.13 μm SOI MOSFETs for high-temperature applications
Kilchytska, V.; De Meyer, Kristin; Flandre, D. (2004) -
Influence of device engineering on the analog and RF performances of SOI MOSFETs
Kilchytska, V.; Nève, A.; Vancaillie, L.; Levacq, D.; Adriaensen, S.; van Meer, Hans; Raynaud, C.; Dehan, M.; Raskin, J.P.; Flandre, D. (2003) -
Influence of HALO implantation on analog performance and comparison between bulk, partially-depleted and fully-depleted MOSFET's
Vancaillie, L.; Kilchytska, V.; Levacq, D.; Adriaensen, S.; van Meer, Hans; De Meyer, Kristin; Torrese, G.; Raskin, J.P.; Flandre, D. (2002) -
Investigating the electronic properties of Al2O3/Cu(In,Ga)Se2 interface
Kotipalli, R.; Vermang, Bart; Joel, J.; Rajkumar, R.; Edoff, M.; Flandre, D. (2015) -
Investigation of charge control related performances in double-gate SOI MOSFETs
Kilchytska, V.; Chung, T.M.; van Meer, Hans; De Meyer, Kristin; Raskin, J.P.; Flandre, D. (2003) -
On the origin of the excess low-frequency noise in graded-channel silicon-on-insulator nMOSFETs
Simoen, Eddy; Claeys, Cor; Chung, T.M.; Flandre, D.; Raskin, J.P. (2007) -
The length-dependence of the 1/f noise of graded-channel SOI nMOSFETs
Simoen, Eddy; Claeys, Cor; Chung, T.M.; Flandre, D.; Raskin, J.P. (2007) -
The low-frequency noise behaviour of graded-channel SOI nMOSFETs
Simoen, Eddy; Claeys, Cor; Chung, T.M.; Flandre, D.; Pavanello, M.A.; Martino, J.A.; Raskin, J.P. (2007) -
Total-dose effects caused by high-energy neutrons and gamma-rays in multiple-gate FETs
Kilchytska, V.; Alvarado, J.; Collaert, Nadine; Rooyackers, Rita; Militaru, O.; Berger, G.; Flandre, D. (2010) -
Total-dose effects caused by high-energy neutrons and g-rays in multiple-gate FETs
Kilchytska, V.; Alvarado, J.; Collaert, Nadine; Rooyackers, Rita; Militaru, O.; Berger, G.; Flandre, D. (2009) -
Ultrathin CIGS solar cells with passivated and highly reflective back contacts - results from the ARCIGS-M consortium
Edoff, M.; Chen, W.-C.; Gordon, Ivan; Vermang, Bart; Bolt, P. J.; van Deelen, J.; Simor, M.; Flandre, D.; Lontchi, J.; Kovacic, M.; Krc, J.; Topic, M.; Guillard, L.; Collin, S.; Cattoni, A.; Naghavi, N.; Jubault, M.; Kotipalli, R.; Fourdrinier, L.; Zhou, Y.; Vignal, R.; Gusak, V.; Niemi, E.; Takei, K.; Bose, S.; Cunha, J. M. V.; Lopes, T. S.; Fernandes, P.A.; Anacleto, P.; Sadewasser, S.; Salomé, P. (2019)