Browsing by author "Nakabayashi, Takashi"
Now showing items 1-6 of 6
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Defect profiling and the role of nitrogen in lanthanum oxide-capped high-k dielectrics for nMOS applications
O'Sullivan, Barry; Mitsuhashi, Riichirou; Okawa, Hiroshi; Sengoku, Naohisa; Schram, Tom; Groeseneken, Guido; Biesemans, Serge; Nakabayashi, Takashi; Ikeda, Atsushi; Niwa, Masaaki (2008-09) -
Development of ALD HfZrOx with TDEAH, TDEAZ and H2O
Shi, Xiaoping; Tielens, Hilde; Takeoka, Shinji; Nakabayashi, Takashi; Nyns, Laura; Adelmann, Christoph; Delabie, Annelies; Schram, Tom; Ragnarsson, Lars-Ake; Schaekers, Marc; Date, Lucien; Schreutelkamp, Rob; Van Elshocht, Sven (2010) -
Development of ALD HfZrOx with TDEAH/TDEAZ and H2O
Shi, Xiaoping; Tielens, Hilde; Takeoka, Shinji; Nakabayashi, Takashi; Nyns, Laura; Adelmann, Christoph; Delabie, Annelies; Schram, Tom; Ragnarsson, Lars-Ake; Schaekers, Marc; Date, Lucien; Schreutelkamp, Rob; Van Elshocht, Sven (2011) -
Quantification of MOSFET device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics
O'Sullivan, Barry; Aoulaiche, Marc; Cho, Moon Ju; Kauerauf, Thomas; Degraeve, Robin; Okawa, Hiroshi; Schram, Tom; Hoffmann, Thomas Y.; Groeseneken, Guido; Biesemans, Serge; Nakabayashi, Takashi; Ikeda, Atsushi; Niwa, Masaaki (2009) -
Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes
O'Sullivan, Barry; Mitsuhashi, Riichirou; Pourtois, Geoffrey; Aoulaiche, Marc; Houssa, Michel; Van der Heyden, Nikolaas; Schram, Tom; Harada, Yoshinao; Groeseneken, Guido; Absil, Philippe; Biesemans, Serge; Nakabayashi, Takashi; Ikeda, Atsushi; Niwa, Masaaki (2008) -
Work-function engineering for 32nm node pMOS devices: high-performance TaCNO-gated films
O'Sullivan, Barry; Mitsuhashi, Riichirou; Ito, Satoru; Oikawa, Kota; Kubicek, Stefan; Paraschiv, Vasile; Adelmann, Christoph; Veloso, Anabela; Yu, HongYu; Schram, Tom; Biesemans, Serge; Nakabayashi, Takashi; Ikeda, Atsushi; Niwa, Masaaki (2008)