Browsing by author "Takakura, K."
Now showing items 41-60 of 78
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Evaluation of electron irradiated SiGe/Si diodes by Raman spectroscopy
Tsunoda, I.; Naka, N.; Takakura, K.; Bargallo Gonzalez, Mireia; Simoen, Eddy; Claeys, Cor; Ohyama, Hidenori (2010) -
Evaluation of the channel engineering impact on the analog performance of deep-submicron partially depleted SOI MOSFETs at low temperatures
Hayama, K.; Ohyama, H.; Takakura, K.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2004) -
Floating body/floating well effects in deep submicron MOSFETs at liquid nitrogen temperature
Simoen, Eddy; Hayama, K.; Takakura, K.; Mercha, Abdelkarim; Claeys, Cor; Ohyama, H. (2005) -
High temperature electron irradiation effects in InGaAs photodiodes
Ohyama, H.; Takakura, K.; Hayama, K.; Hirao, T.; Onoda, S.; Simoen, Eddy; Claeys, Cor (2003) -
High temperature electron irradiation effects in InGaAs photodiodes
Ohyama, H.; Takakura, K.; Hayama, K.; Hirao, T.; Onoda, S.; Simoen, Eddy; Claeys, Cor (2004) -
Impact of 7.5-MeV proton irradiation on front-back gate coupling effect in ultra thin gate oxide FD-SOI n-MOSFETs
Hayama, K.; Takakura, K.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor; Kokkoris, M. (2004) -
Influence of irradiation temperature on electron-irradiated STI Si diodes
Ohyama, Hidenori; Hayama, Kiyoteru; Takakura, K.; Miura, T.; Jono, T.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor (2002) -
Influence of irradiation temperature on electron-irradiated STI Si diodes
Ohyama, H.; Hayama, K.; Takakura, K.; Miura, T.; Shigaki, K.; Jono, T.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor (2003) -
Investigation of the Si doping effect in b-Ga2O3 films by co-sputtering of gallium oxide and Si
Takakura, K.; Funasaki, S.; Tsunoda, I.; Ohyama, H.; Takeuchi, D.; Nakashima, T.; Shibuya, M.; Murakami, K.; Simoen, Eddy; Claeys, Cor (2012) -
Irradiation temperature dependence of radiation damage in Si photodiodes
Ohyama, H.; Hayama, K.; Takakura, K.; Simoen, Eddy; Claeys, Cor; Uemura, J.; Kishikawa, T. (2002) -
Irradiation temperature dependence of radiation damage in STI diodes
Ohyama, H.; Hayama, K.; Takakura, K.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor (2002) -
Irradiation temperature dependence of radiation damage in STI Si diodes
Ohyama, H.; Hayama, K.; Takakura, K.; Miura,; Shigaki, K.; Jono, T.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor (2003) -
Low Frequency Noise: A Show Stopper for State-of-the-art and Future Si, Ge-based and III-V Technologies
Claeys, C.; Oliviera, A.; He, L.; Takakura, K.; Veloso, Anabela; Putcha, Vamsi; Arimura, Hiroaki; Simoen, Eddy (2021) -
Model for the radiation degradation of polycrystalline silicon films
Nakabayashi, M.; Ohyama, H.; Takakura, K.; Simoen, Eddy; Claeys, Cor (2003) -
Performance degradation mechanism of irradiated GaAlAs LED
Ohyama, H.; Takakura, K.; Shitogiden, H.; Motoki, M.; Matsuo, K.; Kuboyama, S.; Simoen, Eddy; Claeys, Cor (2007) -
Physics of the floating body effects in FD-SOI n-MOSFETs at liquid nitrogen temperature
Hayama, K.; Takakura, K.; Ohyama, H.; Rafi, Joan Marc; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2004) -
Radiation damage in deep submicron MOSFETs by high-temperature electron irradiation
Hayama, K.; Ohyama, H.; Takakura, K.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor (2002) -
Radiation damage in proton-irradiated stained Si n-MOSFETs
Ohtani, T.; Hayama, K.; Takakura, K.; Kudou, T.; Ohyama, H.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2007) -
Radiation damage in proton-irradiated strained Si n-MOSFETs
Hayama, K.; Takakura, K.; Ohtani, T.; Kudou, T.; Ohyama, H.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2008) -
Radiation damage in Si photodiodes by high temperature irradiation
Ohyama, Hidenori; Takakura, K.; Simoen, Eddy; Claeys, Cor; Uemura, J.; Kishikawa, T.; Kobayashi, K. (2002)