Browsing by author "Raghavan, Naga"
Now showing items 1-11 of 11
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Improvement of data retention in HfO2 / Hf 1T1R RRAM cell under low operating current
Chen, Yangyin; Komura, Masanori; Degraeve, Robin; Govoreanu, Bogdan; Goux, Ludovic; Fantini, Andrea; Raghavan, Naga; Clima, Sergiu; Zhang, Leqi; Belmonte, Attilio; Redolfi, Augusto; Kar, Gouri Sankar; Groeseneken, Guido; Wouters, Dirk; Jurczak, Gosia (2013) -
Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability
Raghavan, Naga; Degraeve, Robin; Fantini, Andrea; Goux, Ludovic; Strangio, Sebastiano; Govoreanu, Bogdan; Wouters, Dirk; Groeseneken, Guido; Jurczak, Gosia (2013) -
Modeling RRAM SET and RESET statistics with guidelines for optimized operation
Degraeve, Robin; Fantini, Andrea; Raghavan, Naga; Chen, Yangyin; Goux, Ludovic; Clima, Sergiu; Cosemans, Stefan; Govoreanu, Bogdan; Wouters, Dirk; Roussel, Philippe; Kar, Gouri Sankar; Groeseneken, Guido; Jurczak, Gosia (2013) -
Modeling the impact of reset depth on vacancy-induced filament perturbations in HfO2 RRAM
Raghavan, Naga; Degraeve, Robin; Fantini, Andrea; Goux, Ludovic; Wouters, Dirk; Groeseneken, Guido; Jurczak, Gosia (2013) -
On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime
Goux, Ludovic; Raghavan, Naga; Fantini, Andrea; Nigon, Robin; Strangio, Sebastiano; Degraeve, Robin; Kar, Gouri Sankar; Chen, Yangyin; De Stefano, Francesca; Afanasiev, Valeri; Jurczak, Gosia (2014) -
Performance and reliability of ultra-thin HfO2-based RRAM (UTO-RRAM)
Govoreanu, Bogdan; Ajaykumar, Arjun; Lipowicz, Hubert; Chen, Yangyin; Liu, Jen-Chieh; Degraeve, Robin; Zhang, Leqi; Clima, Sergiu; Goux, Ludovic; Radu, Iuliana; Fantini, Andrea; Raghavan, Naga; Kar, Gouri Sankar; Kim, Woosik; Redolfi, Augusto; Wouters, Dirk; Altimime, Laith; Jurczak, Gosia (2013) -
RTN insight to filamentary instability and disturb immunity in ultra-low power switching HfOx and AlOx-based RRAM
Raghavan, Naga; Degraeve, Robin; Goux, Ludovic; Fantini, Andrea; Wouters, Dirk; Groeseneken, Guido; Jurczak, Gosia (2013) -
Statistical insight into controlled forming and forming free stacks for HfOx RRAM
Raghavan, Naga; Fantini, Andrea; Degraeve, Robin; Roussel, Philippe; Goux, Ludovic; Wouters, Dirk; Groeseneken, Guido; Jurczak, Gosia (2013) -
Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability
Raghavan, Naga; Degraeve, Robin; Fantini, Andrea; Goux, Ludovic; Wouters, Dirk; Groeseneken, Guido; Jurczak, Gosia (2013) -
Switching aspects of RRAM – first principles and model simulations insight
Clima, Sergiu; Degraeve, Robin; Sankaran, Kiroubanand; Chen, Yangyin; Fantini, Andrea; Belmonte, Attilio; Zhang, Leqi; Raghavan, Naga; Goux, Ludovic; Govoreanu, Bogdan; Wouters, Dirk; Jurczak, Gosia; Pourtois, Geoffrey (2013) -
Understanding the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation
Goux, Ludovic; Fantini, Andrea; Degraeve, Robin; Raghavan, Naga; Nigon, Robin; Strangio, Sebastiano; Wouters, Dirk; Govoreanu, Bogdan; Chen, Yangyin; Komura, Masanori; De Stefano, Francesca; Afanasiev, Valeri; Jurczak, Gosia (2013)