Browsing by author "Lebedev, O."
Now showing items 1-8 of 8
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A novel approach to analyse FTIR spectra of precipitates in moderately and heavily doped silicon
De Gryse, O.; Vanhellemont, J.; Clauws, P.; Lebedev, O.; Van Landuyt, J.; Simoen, Eddy; Claeys, Cor (2003) -
Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy
De Gryse, O.; Clauws, P.; Vanhellemont, J.; Lebedev, O.; Van Landuyt, J.; Simoen, Eddy; Claeys, Cor (2002) -
Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM
De Gryse, O.; Clauws, P.; Lebedev, O.; Van Landuyt, J.; Vanhellemont, Jan; Claeys, C.; Simoen, Eddy (2001) -
Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE
Bougrioua, Zahia; Farvacque, J. L.; Moerman, Ingrid; Demeester, Piet; Harris, J. J.; Lee, K.; Van Tendeloo, G.; Lebedev, O.; Thrush, E. J. (1999) -
Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon
Simoen, Eddy; Loo, Roger; Claeys, Cor; De Gryse, O.; Clauws, P.; Van Landuyt, J.; Lebedev, O. (2002) -
Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques
De Gryse, O.; Clauws, P.; Van Landuyt, J.; Lebedev, O.; Claeys, Cor; Simoen, Eddy; Vanhellemont, Jan (2002) -
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE
Farvacque, J. L.; Bougrioua, Zahia; Moerman, Ingrid; Van Tendeloo, G.; Lebedev, O. (1999) -
Theoretical analysis of electrical transport in undoped and Si doped GaN grown by LP-MOVPE
Bougrioua, Zahia; Farvacque, J. L.; Moerman, Ingrid; Demeester, Piet; Harris, J. J.; Lee, K.; Van Tendeloo, G.; Lebedev, O.; Thrush, E. J. (1999)