Browsing by author "Bonaldo, Stefano"
Now showing items 1-5 of 5
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TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses
Bonaldo, Stefano; Gorchichko, Mariia; Zhang, En Xia; Ma, Teng; Mattiazzo, Serena; Bagatin, Marta; Paccagnella, Alessandro; Gerardin, Simone; Schrimpf, Ronald D.; Reed, Robert A.; Linten, Dimitri; Mitard, Jerome; Fleetwood, Daniel M. (2022) -
Total-ionizing-dose effects in InGaAs MOSFETs with high-k gate dielectrics and InP substrates
Bonaldo, Stefano; Zhang, En Xia; Zhao, Simeng; Putcha, Vamsi; Parvais, Bertrand; Linten, Dimitri; Gerardin, Simone; Paccagnella, Alessandro; Reed, Robert A.; Schrimpf, Ronald D.; Fleetwood, Daniel M. (2020) -
Total-ionizing-dose effects on InGaAs FinFETs with improved gate stack
Zhao, Simeng E.; Bonaldo, Stefano; Wang, Pengfei; Zhang, En Xia; Waldron, Niamh; Collaert, Nadine; Putcha, Vamsi; Linten, Dimitri; Gerardin, Simone; Paccagnella, Alessandro; Schrimpf, Ronald D.; Reed, Robert A.; Fleetwood, Daniel M. (2019) -
Total-ionizing-dose effects on InGaAs FinFETs with modified gate stack
Zhao, Simeng E.; Bonaldo, Stefano; Wang, Pengfei; Zhang, En Xia; Waldron, Niamh; Collaert, Nadine; Putcha, Vamsi; Linten, Dimitri; Gerardin, Simone; Paccagnella, Alessandro; Schrimpf, Ronald D.; Reed, Robert A.; Fleetwood, Daniel M. (2020-01) -
Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors
Gorchichko, Mariia; Zhang, En Xia; Wang, Pan; Bonaldo, Stefano; Schrimpf, Ronald D.; Reed, Robert A.; Linten, Dimitri; Mitard, Jerome; Fleetwood, Daniel M. (2021)